Reflection high energy electron diffraction intensity oscillations during the growth by

Neave, J.H.; Zhang, J.; Zhang, X.M.; Fawcett, P.N.; Joyce, B.A.
February 1993
Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p753
Academic Journal
Investigates the reflection high energy electron diffraction intensity oscillation during the eptaxial growth of gallium arsenide(110) film. Use of molecular beam epitaxial technique; Dependence of the oscillation period on growth temperature, flux ratio and duration; Interpretation of the results in terms of growth modes and relative adatom populations.


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