TITLE

Studies of carrier heating in InGaAs/AlGaAs strained-layer quantum well diode lasers using a

AUTHOR(S)
Sun, C.-K.; Choi, H.K.; Wang, C.A.; Fujimoto, J.G.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p747
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the carrier heating process in InGaAs/AlGaAs strained-layer quantum well diode laser. Use of a femtosecond multiple-wavelength pump probe technique; Differentiation between free-carrier absorption and stimulated transition; Transient amplification and gain saturation of the device.
ACCESSION #
4322969

 

Related Articles

  • Hot carrier and hot phonon effects on high-speed quantum well lasers. Tsai, C.Y.; Eastman, L.F. // Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3408 

    Analyzes the effects of hot carrier and hot phonon on the modulation response of semiconductor quantum well lasers. Dependence of carrier heating on the energy relaxation time of carriers and the lifetime of longitudinal-optic (LO) phonons; Effect of carrier heating on modulation bandwidth;...

  • Hot carrier induced picosecond dynamics of a vertical cavity surface emitting laser: Influence of transverse effects. Mu┬Ęcke, O. D.; Wegener, M. // Applied Physics Letters;8/3/1998, Vol. 73 Issue 5 

    The interplay of carrier heating effects and transverse variations of the carrier distribution functions has a significant influence on the ultrafast emission dynamics of semiconductor vertical cavity surface emitting lasers. This interplay can lead to dynamic overshooting and oscillations (here...

  • Momentum gaps and laser stability. Brown, T. G.; Olofsson, L. // Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p5277 

    Examines the impact of a momentum gap on the stability of a semiconductor laser. Influence of a carrier density perturbation on the output of a laser; Factors through which momentum gaps in the dispersion relation of a periodic structure can appear; Discussion on how to obtain analytic...

  • Subpicosecond switch-off and switch-on of a semiconductor laser due to transient hot carrier.... Elsasser, M.; Hense, S.G. // Applied Physics Letters;2/17/1997, Vol. 70 Issue 7, p853 

    Examines the subpicosecond switch-off and -on of a semiconductor laser due to transient hot carrier effects. Basis for the laser relaxation oscillations; Importance of the energy transfer processes within the electronic system; Effects of carrier heating.

  • Ultra bright surface emission from a distributed Bragg reflector hot electron light emitter. O'Brien, A.; Balkan, N. // Applied Physics Letters;1/20/1997, Vol. 70 Issue 3, p366 

    Demonstrates the ultrabright stimulated emission from hot electron light emitting and laser semiconductor heterostructure (HELLISH-1) device. Comparison between the operation of HELLISH-1 and ultrabright HELLISH-1 (UB-HELLISH-1); Detection of super radiant emission with an improved full width;...

  • Transient hot-carrier optical gain in a gain-switched semiconductor laser. Ito, Takashi; Chen, Shaoqiang; Yoshita, Masahiro; Mochizuki, Toshimitsu; Kim, Changsu; Akiyama, Hidefumi; Pfeiffer, Loren N.; West, Ken W. // Applied Physics Letters;8/19/2013, Vol. 103 Issue 8, p082117 

    The transient optical gain was quantitatively determined from the rise time of output pulses of a gain-switched semiconductor laser via impulsive optical pumping. The optical gain for a high carrier density during gain switching was greatly reduced from that during steady-state operation because...

  • Dynamics of injected electron cooling in GaAs. Hayes, J. R.; Levi, A. F. J.; Weigmann, W. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1365 

    Using the technique of hot-electron spectroscopy we have measured the change in hot-electron spectra with transit region width enabling us to obtain a dynamic picture of injected hot-electron cooling in n+ GaAs. All features in the spectra have been identified and...

  • Hot-electron flow in an inhomogeneous field. Artaki, Michael // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p141 

    The drift velocity for hot electrons is expected to depend on the gradient of an inhomogeneous field, dF/dx, through a term proportional to a phenomenological length constant. Estimates suggest that the field gradient effect can be significant in short channel devices. Monte Carlo calculations...

  • Hot-electron transport in a graded band-gap base heterojunction bipolar transistor. Hayes, J. R.; Harbison, J. P. // Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p490 

    In this letter we report the direct observation of electron heating in an electric field using hot-electron spectroscopy. The device structure used for the study was a graded band-gap base heterojunction bipolar transistor, fabricated in the GaAs/AlGaAs semiconductor alloy system. A thermal...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics