TITLE

Electrical characteristics of directly-bonded GaAs and InP

AUTHOR(S)
Wada, Hiroshi; Ogawa, Yoh; Kamijoh, Takeshi
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p738
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the electrical characteristics of directly bonded GaAs/InP heterointerfaces. Consistency of the measured properties with a model based on thermionic emission theory; Heat treatment and bonding application on the wafer surfaces; Fabrication of InP/GaInAsP laser using direct bonding.
ACCESSION #
4322966

 

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