TITLE

Uniformity of Ge[sub x]Si[sub 1-x] epitaxial layers grown by ultrahigh vacuum chemical-vapor

AUTHOR(S)
Greve, D.W.; McLaughlin, G.; Capano, M.A.; Racanelli, M.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p726
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the thickness and compositional uniformity of epitaxial Ge[sub x]Si[sub 1-x] layers grown by ultrahigh vacuum chemical vapor deposition. Evaluation of layer uniformity; Layer composition and degree of strain relaxation; Comparison of the results with the prediction of Monte Carlo simulation.
ACCESSION #
4322961

 

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