TITLE

GaN grown on hydrogen plasma cleaned 6H-SiC substrates

AUTHOR(S)
Lin, M.E.; Strite, S.; Agarwal, A.; Salvador, A.; Zhou, G.L.; Teraguchi, N.; Rockett, A.; Morkoc, H.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p702
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the epitaxial gallium nitride (GaN) layers grown on 6H-silicon carbide (SiC) (0001) substrates. Techniques for the preparation of SiC substrate; Growth of high quality GaN on SiC substrates; Purpose of using the x-ray diffractometry.
ACCESSION #
4322953

 

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