X-ray and Raman scattering characterization of Ge/Si buried layers

Headrick, R.L.; Baribeau, J.-M.; Lockwood, D.J.; Jackman, T.E.; Bedzyk, M.J.
February 1993
Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p687
Academic Journal
Investigates the characterization of germanium (Ge)/silicon (Si) buried layers. Synthesis of semiconductor layered structures; Techniques for measuring the strain and morphology in heterostructures; Use of energy tunability of x-rays from the synchrotron source.


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