TITLE

Direct evidence for substitutional Li after ion-implantation into highly phosphorus-doped Si

AUTHOR(S)
Wahl, U.; Hofsass, H.; Jahn, S.G.; Winter, S.; Recknagel, E.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p684
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the ion implantation of radioactive lithium (Li) into single-crystalline n-silicon (Si) of low resistivity. Calculations of ion channeling effects; Measurements of the alpha-particles emitted during the decay of Li; Factors attributing to the diffusion of Li.
ACCESSION #
4322947

 

Related Articles

  • Sharp photoluminescence of CdS nanocrystals in Al[sub 2]O[sub 3] matrices formed by sequential ion implantation. Ando, M.; Kanemitsu, Y.; Kushida, T.; Matsuda, K.; Saiki, T.; White, C. W. // Applied Physics Letters;7/23/2001, Vol. 79 Issue 4 

    We report on photoluminescence (PL) experiments in CdS nanocrystals fabricated by sequential ion implantation in Al[sub 2]O[sub 3] matrices. The PL spectrum and the spatial image of the PL intensity have been studied at 8 K using a scanning near-field optical microscope. The PL spectrum at each...

  • Very shallow p+-n junction formation by low-energy BF+2 ion implantation into crystalline and germanium preamorphized silicon. Ozturk, M. C.; Wortman, J. J.; Fair, R. B. // Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p963 

    Very low energy (6 keV) BF+2 ion implantation has been used to form very shallow (≤1000 Å) junctions in crystalline and Ge+ preamorphized Si. Low-temperature furnace annealing was used to regrow the crystal, and rapid thermal annealing was used for dopant activation and radiation...

  • Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon. Aleksandrov, O. V.; Nikolaev, Yu. A.; Sobolev, N. A. // Semiconductors;Jan1999, Vol. 33 Issue 1, p101 

    It is known that Er-ion implantation and O-ion coimplantation into an amorphized Si layer affect the final Er concentration profile when the layer is subjected to solid-phase epitaxial (SPE) crystallization. This paper discusses how this effect depends on dose, energy, temperature, and the...

  • Buried monocrystalline aluminum layers in beryllium using ion implantation. Brown, D. W.; Musket, R. G.; Munir, Z. A. // Applied Physics Letters;12/17/1990, Vol. 57 Issue 25, p2651 

    A buried monocrystalline aluminum layer was formed in (1010) beryllium by implanting 200 keV Al+ to a dose of 1.1×1018 Al/cm2 and subsequently annealing the implanted beryllium at 500 °C for 1 h. Rutherford backscattering showed layer formation was critically dependent on aluminum dose....

  • Study of damage induced by room-temperature Al ion implantation in Hg0.8Cd0.2Te by x-ray diffuse... Renault, P.O.; Declemy, A. // Journal of Applied Physics;7/15/1997, Vol. 82 Issue 2, p609 

    Studies ion-implantation damages in Hg0.8Cd0.2Te single crystals. X-ray diffusion scattering theory; Symmetry of the diffuse scattering; Asymptotic scattering; Nature of the implantation-induced defects; Type of the interstitial dislocation loops; Evolution of the implantation defects in...

  • Kinetics of solid phase epitaxy in buried amorphous Si layers formed by MeV ion implantation. McCallum, J. C. // Applied Physics Letters;8/12/1996, Vol. 69 Issue 7, p925 

    The kinetics of solid phase epitaxy have been measured in buried amorphous Si layers produced by ion implantation. Crystallization occurs simultaneously at both amorphous/crystalline interfaces of the buried layer. By collecting time resolved reflectivity data simultaneously at λ=1152 nm and...

  • High energy carbon ions implantation: An attempt to grow diamond inside copper. Zhang, Z.H.; Chow, L.; Paschke, K.; Yu, N.; Tao, Y.K.; Matsuishi, K.; Meng, R.L.; Hor, P.; Chu, W.K. // Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2650 

    Demonstrates carbon ion implantation into single-crystal copper. Use of RBS-channeling measurements to examine the regrowth of the radiation-damaged copper; Temperature required for the occurrence of carbon segregation; Analysis of the buried carbon layer by Raman scattering.

  • Analysis of ion-implanted surface and interface structures by computer-simulated backscattering spectra. Kido, Y.; Kakeno, M.; Yamada, K.; Kawamoto, J.; Ohsawa, H.; Kawakami, T. // Journal of Applied Physics;10/15/1985, Vol. 58 Issue 8, p3044 

    Presents an analysis of ion-implanted surface and interface structures by computer-simulated backscattering spectra. Effects of isotopes and energy fluctuation on the spectrum simulation; Analysis of an ion-beam-induced damage profiel; Description of the epitaxial recovery of crystallinity.

  • Damage in ion implanted silicon measured by x-ray diffraction. Milita, S.; Servidori, M. // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8278 

    Presents information on an x-ray study of damage accumulation with dose in silicon implanted with boron and silicon ions at different energies. Semikinematical diffraction from a crystal with buried amorphous layer; Strain and disorder profiles in samples with buried amorphous layers; Conclusions.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics