Direct evidence for substitutional Li after ion-implantation into highly phosphorus-doped Si

Wahl, U.; Hofsass, H.; Jahn, S.G.; Winter, S.; Recknagel, E.
February 1993
Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p684
Academic Journal
Reports the ion implantation of radioactive lithium (Li) into single-crystalline n-silicon (Si) of low resistivity. Calculations of ion channeling effects; Measurements of the alpha-particles emitted during the decay of Li; Factors attributing to the diffusion of Li.


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