Observation of impurity effects on the nucleation of arsenic precipitates in GaAs

Ibbetson, J.P.; Speck, J.S.; Gossard, A.C.; Mishra, U.K.
January 1993
Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p169
Academic Journal
Examines the precipitation of arsenic in low temperature gallium arsenide layers uniformly doped with silicon and beryllium. Use of transmission electron microscopy; Dopant type dependence of the precipitate size and density; Homogeneous formation of the precipitates on the material.


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