TITLE

Measurement of nonradiative Auger and radiative recombination rates in strained-layer

AUTHOR(S)
Wang, M.C.; Kash, K.; Zah, C.E.; Bhat, R.; Chuang, S.L.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p166
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measures the radiative and Auger recombination rates in strained layer indium gallium arsenides/aluminum gallium indium arsenide quantum well systems. Effectiveness of using strain to reduce nonradiative Auger recombination rate in semiconductor lasers; Use of time-resolved photoluminescence measurements; Radiative carrier lifetime.
ACCESSION #
4322926

 

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