High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a

Ban, V.S.; Rodefeld, D.; Flemish, J.R.; Jones, K.A.
January 1993
Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p160
Academic Journal
Presents a method for the epitaxial growth of indium phosphide heterostructures. Use of a combination of organometallic and hydride vapor phase epitaxy features; Coinjection of trimethylindium with hydrochloric acid into a hot-wall reactor; Characteristics of the fabricated materials.


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