TITLE

Migration enhanced epitaxy growth of GaAs on Si with (GaAs)[sub 1-x](Si[sub 2])[sub x]/GaAs

AUTHOR(S)
Rao, T. Sudersena; Nozawa, K.; Horikoshi, Y.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p154
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effectiveness of (GaAs)[sub 1-x](Si[sub 2])[sub x]/gallium arsenide (GaAs) strained-layer superlattices as buffer layers in GaAs grown on silicon by migration enhanced epitaxy. Purpose of the buffer layer; Use of cross-sectional transmission electron microscopy; Measurement of the dislocation densities.
ACCESSION #
4322922

 

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