Migration enhanced epitaxy growth of GaAs on Si with (GaAs)[sub 1-x](Si[sub 2])[sub x]/GaAs

Rao, T. Sudersena; Nozawa, K.; Horikoshi, Y.
January 1993
Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p154
Academic Journal
Examines the effectiveness of (GaAs)[sub 1-x](Si[sub 2])[sub x]/gallium arsenide (GaAs) strained-layer superlattices as buffer layers in GaAs grown on silicon by migration enhanced epitaxy. Purpose of the buffer layer; Use of cross-sectional transmission electron microscopy; Measurement of the dislocation densities.


Related Articles

  • Ion-implanted In[sub 0.53]Ga[sub 0.47]As for ultrafast optoelectronic applications. Carmody, C.; Tan, H. H.; Jagadish, C.; Gaarder, A.; Marcinkevicˇius, S. // Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3913 

    Undoped In[sub 0.53]Ga[sub 0.47]As epilayers were implanted with 2-MeV Fe[sup +] ions at doses of 1×10[sup 15] and 1×10[sup 16] cm[sup -2] at room temperature and annealed at temperatures between 500 and 800 °C. Hall-effect measurements show that after annealing, layers with...

  • Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis. Paulus, M. J.; Huang, C. I.; Bozada, C. A.; Cheney, M. E.; Dudley, S. C.; Stutz, C. E.; Evans, K. R.; Jones, R. L. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4765 

    Presents a study that investigated the characteristics of aluminum arsenide/gallium arsenide superlattice barriers using electrical barrier height analysis. Methodology; Determination of the superlattice barrier layer thickness; Comparison of the superlattice barrier of gallium arsenide and...

  • Temperature dependence of the electronic coherence of GaAs-GaAlAs superlattices. Mendez, E. E.; Agulló-Rueda, F.; Hong, J. M. // Applied Physics Letters;6/18/1990, Vol. 56 Issue 25, p2545 

    We have shown that the coherence length of electrons in a 55-Å-period GaAs-GaAlAs superlattice does not depend strongly on temperature in the range 5–292 K, varying from 17 periods at 5 K to a minimum of nine periods at room temperature. The quantum coherence was determined by...

  • Wannier–Stark localization in a strained InGaAs/GaAs superlattice. Pezeshki, B.; Thomas, D.; Harris, J. S. // Applied Physics Letters;11/12/1990, Vol. 57 Issue 20, p2116 

    We report the first room-temperature observation of Wannier–Stark localization in a strained InGaAs/GaAs superlattice. The localization effects are in close agreement to theory. At low electric fields, the room-temperature absorption data show a small Wannier exciton peak at the lower...

  • Calculation of the Low-Field Mobility of Quasi-Two-Dimensional Electrons in a GaAs/Al[sub 0.36]Ga[sub 0.64]As Superlattice at Temperatures in the Region of 77 K. Borisenko, S. I. // Semiconductors;Jul2002, Vol. 36 Issue 7, p808 

    The longitudinal and transverse mobilities of quasi-two-dimensional electrons in a GaAs/Al[sub 0.36]Ga[sub 0.64]As superlattice was calculated in the region of the liquid-nitrogen temperature and in the electron-concentration range from 10[sup 13] to 10[sup 15] cm[sup -3]. Scattering of...

  • Application of superlattices to the investigation of resonant defect in GaAs layers. Feng, S.L.; Zhou, J. // Applied Physics Letters;4/24/1995, Vol. 66 Issue 17, p2256 

    Describes the application of superlattices to detect resonant electron irradiation-induced deep level defects in gallium arsenide (GaAs) semiconductor layers. Characterization of defects by deep level transient spectroscopy; Effect of miniband formation in superlattice on band gap; Metastatic...

  • Ferromagnetism and interlayer exchange coupling in short-period (Ga,Mn)As/GaAs superlattices. Mathieu, R.; Svedlindh, P.; Sadowski, J.; Swiatek, K.; Karlsteen, M.; Kanski, J.; Ilver, L. // Applied Physics Letters;10/14/2002, Vol. 81 Issue 16, p3013 

    Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of nonmagnetic GaAs spacer. The short-period Ga[sub 0.93]Mn[sub 0.07]As/GaAs superlattices exhibit a paramagnetic-to-ferromagnetic phase transition...

  • Ion mixing of III-V compound semiconductor layered structures. Xia, W.; Pappert, S. A.; Zhu, B.; Clawson, A. R.; Yu, P. K. L.; Lau, S. S.; Poker, D. B.; White, C. W.; Schwarz, S. A. // Journal of Applied Physics;3/15/1992, Vol. 71 Issue 6, p2602 

    Deals with ion mixing of III-V compound semiconductor layered structures. Conventional method to induce compositional disorder in a layered structure; Effect of the subsequent high-temperature annealing step on the device processing flexibility; Ion mixing behavior of semiconductor superlattice...

  • Intermixing of AlxGa1-xAs/GaAs superlattices by pulsed laser irradiation. Ralston, J.; Moretti, A. L.; Jain, R. K.; Chambers, F. A. // Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1817 

    Intermixing of AlxGa1-xAs/GaAs superlattices is demonstrated utilizing laser pulses of a few nanosecond duration. Raman spectroscopy and sputter Auger profiling have been used to assess the degree of intermixing and residual damage in the laser irradiated samples. The results indicate that...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics