TITLE

Crystallographic tilting resulting from nucleation limited relaxation

AUTHOR(S)
LeGoues, F.K.; Mooney, P.M.; Chu, J.O.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p140
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measures the crystallographic tilt in relaxed Si[sub 0.7]Ge[sub 0.3] thin films grown on vicinal (001) silicon substrates. Relationship of the tilt angle orientation with the miscut; Significance of intermediate graded layers in the angle size; Influence of the miscut on activation energy of nucleation and glide force applied on dislocations.
ACCESSION #
4322916

 

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