Crystallographic tilting resulting from nucleation limited relaxation

LeGoues, F.K.; Mooney, P.M.; Chu, J.O.
January 1993
Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p140
Academic Journal
Measures the crystallographic tilt in relaxed Si[sub 0.7]Ge[sub 0.3] thin films grown on vicinal (001) silicon substrates. Relationship of the tilt angle orientation with the miscut; Significance of intermediate graded layers in the angle size; Influence of the miscut on activation energy of nucleation and glide force applied on dislocations.


Related Articles

  • Unusually low resistivity of copper germanide thin films formed at low temperatures. Krusin-Elbaum, L.; Aboelfotoh, M.O. // Applied Physics Letters;3/25/1991, Vol. 58 Issue 12, p1341 

    Studies the resistivity of copper germanide thin films formed at low temperatures. Formation of a monoclinic crystal structure; Reduction of device dimensions.

  • Mechanism for ordering in SiGe films with reconstructed surface. Araki, T.; Fujimura, N. // Applied Physics Letters;9/1/1997, Vol. 71 Issue 9, p1174 

    Examines a model of the ordering mechanism in silicon germanide films with reconstructed surface. Implication for the occurrence of ordered structure types; Investigation on the stability of the structures by strain energy calculations; Discussion on the atomic exchange process forming the...

  • Formation of a crystalline phase in amorphous hydrogenated carbon-germanium films by electron.... Tyczkowski, J.; Pietrzyk, B. // Applied Physics Letters;11/17/1997, Vol. 71 Issue 20, p2943 

    Examines the influence of electron beam irradiation on the morphology of plasma deposited amorphous hydrogenated carbon-germanium films produced from tetramethylgermanium. Insensitivity of the material to the process; Occurrence of a crystalline phase in the semiconductor; Agglomeration of...

  • Magnetic depth profiling and characterization of Fe-oxide films by Kerr rotation and spin polarized photoemission. Kay, Eric; Sigsbee, R. A.; Bona, G. L.; Taborelli, M.; Siegmann, H. C. // Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p533 

    The site occupancy and the valence valence state of Fe ions in a ferritelike sputtered thin film and its subsequent magnetic properties are well known to critically depend on sample preparation techniques. We show how measuring spin polarization of threshold photoelectrons having a...

  • A model of strain relaxation in hetero-epitaxial films on compliant substrates. Kästner, G.; Gösele, U.; Tan, T.Y. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 1, p13 

    Abstract. We propose a model for relaxing the lattice mismatch between a pseudomorphic heteroepitaxial film and its substrate, which is a thin film on a handling wafer with a relaxed twist boundary consisting of a cross-grid of screw dislocations. The model scheme predicts the generation of...

  • Intrinsic superconductor/normal-metal/superconductor-like weak links in Y1Ba2Cu3O7-x thin films. England, P.; Venkatesan, T.; Wu, X. D.; Inam, A.; Hegde, M. S.; Cheeks, T. L.; Craighead, H. G. // Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2336 

    Magnetotransport measurements on micron-sized wires of the thin-film high Tc superconductor Y1 Ba2 Cu3 O7-x made by pulsed laser deposition reveal an exponential suppression of the critical current with magnetic field, and a power law dependence of the critical current on reduced temperature. We...

  • Restoration of Structure of Thin Multilayer Films from Reflectivity Data by Stepwise Model Refinement. Yanusova, L.G.; Borisova, S.F.; Volkov, V.V.; Astaf'ev, S.B.; Shchedrin, B.M. // Crystallography Reports;Sep2003, Vol. 48 Issue 5, p860 

    The computational experiment on the restoration of the model parameters of the cross-section profile of the scattering density of thin multilayer films is described. It is shown that the use of the stepwise model of the structure, which is described by the thickness, density, absorption, and...

  • Improvement of crystallographic and electroluminescent characteristics of SrS:Ce thin film devices by post-deposition annealing in Ar-S atmosphere. Ohmi, Koutoku; Fujimoto, Kazushi; Tanaka, Shosaku; Kobayashi, Hiroshi // Journal of Applied Physics;7/1/1995, Vol. 78 Issue 1, p428 

    Deals with the improvement of crystallographic and electroluminescent (EL) characteristics of SrS:Ce thin film devices by post-deposition annealing in Ar-S atmosphere. Investigation on the crystallographic properties of SrS:Ce thin films; Effect of annealing on crystallographic properties of...

  • Preferred orientation in Cr- and Co-based thin films and its effects on the read/write performance of the media. Tsai, Hsiao-chu; Lal, Brij B.; Eltoukhy, Atef // Journal of Applied Physics;4/1/1992, Vol. 71 Issue 7, p3579 

    Provides information on a study that investigated the formation of preferred crystallographic orientation in chromium underlayer as well as CoCrTa and CoCrPtTa thin films and its effects on the recording performance of longitudinal media. Experimental procedure; Results and discussion on the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics