TITLE

Fourier transform diagnostics of gaseous species during microwave assisted diamond deposition

AUTHOR(S)
Campargue, A.; Chenevier, M.; Fayette, L.; Marcus, B.; Mermoux, M.; Ross, A.J.
PUB. DATE
January 1993
SOURCE
Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p134
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the gaseous species formed during microwave plasma assisted diamond thin film chemical vapor deposition. Use of Fourier transform spectroscopy; Dissociation of methane in the plasma; Recombination products of the dissociation.
ACCESSION #
4322914

 

Related Articles

  • Strong adhesion in nanocrystalline diamond films on silicon substrates. Sharda, T.; Umeno, M.; Soga, T.; Jimbo, T. // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p4874 

    Strong adhesion is shown to be achieved in the growth of smooth nanocrystalline diamond (NCD) thin films on silicon substrates at 600 °C using biased enhanced growth in microwave plasma chemical vapor deposition. The strong adhesion is evident from the films sustaining compressive stress,...

  • Fracture strength of ultrananocrystalline diamond thin films—identification of Weibull parameters. Espinosa, H. D.; Peng, B.; Prorok, B. C.; Moldovan, N.; Auciello, O.; Carlisle, J. A.; Gruen, D. M.; Mancini, D. C. // Journal of Applied Physics;11/1/2003, Vol. 94 Issue 9, p6076 

    The fracture strength of ultrananocrystalline diamond (UNCD) has been investigated using tensile testing of freestanding submicron films. Specifically, the fracture strength of UNCD membranes, grown by microwave plasma chemical vapor deposition (MPCVD), was measured using the membrane deflection...

  • Control of plasma space potentials and chemical vapor deposition of nanocrystalline diamond films in surface-wave excited low-pressure plasmas. Kim, Jaeho; Katsurai, Makoto // Journal of Applied Physics;1/15/2007, Vol. 101 Issue 2, p023301 

    A dc biasing method, developed in this work, has been investigated for the control of plasma space potentials and the chemical vapor deposition of nanocrystalline diamond (NCD) films in a planar surface-wave excited plasma at gas pressures below 100 mTorr. A negative dc voltage was applied to a...

  • Diamond-like carbon films grown by very high frequency (100 MHz) plasma enhanced chemical vapor deposition technique. Kumar, Sushil; Dixit, P. N.; Sarangi, D.; Bhattacharyya, R. // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p49 

    Diamond-like carbon films were grown by VHF-PECVD technique. Since the self-bias potential developed in a VHF plasma is very low, sufficiently high negative dc voltage was applied to the substrates in order to make DLC film being grown reasonably hard. Also a comparative study of VHF grown films...

  • In situ observations of optical emission spectra in the diamond deposition environment of arc discharge plasma chemical vapor deposition. Zhang, Fangqing; Zhang, Yafei; Yang, Yinghu; Chen, Guanghua; Jiang, Xiangliu // Applied Physics Letters;10/1/1990, Vol. 57 Issue 14, p1467 

    In order to investigate the growth mechanism of diamond thin films, the in situ optical emission spectra of direct current (dc) arc discharge plasma, including the spatial distributions and different CH4/H2 ratios, have been measured during the growth processes of diamond thin films prepared by...

  • Effect of diamond facet on the electrical properties of Pt/BF[sup +][sub 2] ion implanted.... Cheng, Y.T.; Lin, S.J. // Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3344 

    Examines the effect of diamond facet on the electrical properties of platinum (Pt)/polycrystalline diamond films. Observation of ohmic behavior for diamond films with facet (111); Growth of diamond films on silicon (100) substrates by plasma enhanced chemical vapor deposition; Use of Raman...

  • Diamond(001) single-domain 2x1 surface grown by chemical vapor deposition. Tsuno, Takashi; Tomikawa, Tadashi; Shikata, Shin-ichi; Imai, Takahiro; Fujimori, Naoji // Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p572 

    Demonstrates the epitaxial growth of diamond films on an off-angle(001) substrate by microwave plasma assisted chemical vapor deposition. Use of low-energy electron diffraction and scanning tunneling microscopy; Synthesis of Ib-type single-crystal diamond substrate.

  • Effect of misorientation angles on the surface morphologies of (001) homoepitaxial diamond thin.... Naesung Lee; Badzian, Andrzej // Applied Physics Letters;4/24/1995, Vol. 66 Issue 17, p2203 

    Investigates the effect of surface misorientation angle of (001) diamond substrate on the surface morphologies of homoepitaxial diamond thin films. Growth and etching of the thin film using plasma-assisted chemical vapor deposition; Similarities between the etched and the grown surface...

  • Cathodoluminescence from diamond films grown by plasma-enhanced chemical vapor deposition in.... Graham, R.J.; Posthill, J.B.; Rudder, R.A.; Markunas, R.J. // Applied Physics Letters;11/4/1991, Vol. 59 Issue 19, p2463 

    Examines the diamond films grown by plasma-enhanced chemical vapor deposition by cathodoluminescence. Deposition of the films in dilute CO, CF[sub 4], and CH[sub 4]; Assessment of the incorporation of optically active impurities and defects; Observation of dislocation-related band A...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics