Effect of hydrogenation on hole intersubband absorption in delta-doped Si layers

Arbet-Engels, V.; Wang, K.L.; Karunasiri, R.P.G.; Park, J.S.
October 1991
Applied Physics Letters;10/28/1991, Vol. 59 Issue 18, p2248
Academic Journal
Examines the effect of hydrogenation on hole intersubband absorption in delta-doped silicon layers. Use of Fourier transform infrared spectroscopy; Effectiveness of the passivation of boron acceptors; Deactivation of specific layered regions.


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