TITLE

Effect of hydrogenation on hole intersubband absorption in delta-doped Si layers

AUTHOR(S)
Arbet-Engels, V.; Wang, K.L.; Karunasiri, R.P.G.; Park, J.S.
PUB. DATE
October 1991
SOURCE
Applied Physics Letters;10/28/1991, Vol. 59 Issue 18, p2248
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of hydrogenation on hole intersubband absorption in delta-doped silicon layers. Use of Fourier transform infrared spectroscopy; Effectiveness of the passivation of boron acceptors; Deactivation of specific layered regions.
ACCESSION #
4322876

 

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