TITLE

Self-aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas-source molecular beam epitaxy

AUTHOR(S)
Chen, Y.K.; Wu, M.C.; Kuo, J.M.; Chin, M.A.; Sergent, A.M.
PUB. DATE
December 1991
SOURCE
Applied Physics Letters;12/2/1991, Vol. 59 Issue 23, p2929
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the fabrication of index-guided self-aligned InGaAs/GaAs/InGaP quantum well lasers by gas-source molecular beam epitaxy with two growth steps. Use of aluminum-free InGaP as cladding layers; Measurement of a room temperature continuous wave lasing threshold current.
ACCESSION #
4322774

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics