Formation of a thin SiO[sub 2] film using synchrotron radiation excited reaction

Ogawa, Taro; Ochiai, Isao; Mochiji, Kozo; Hiraiwa, Atsushi
August 1991
Applied Physics Letters;8/12/1991, Vol. 59 Issue 7, p794
Academic Journal
Examines the possibility of altering an oxygen-adsorbed silicon surface to silicon oxide. Use of synchrotron radiation excited reaction; Adsorption of oxygen gas and irradiation of soft x-ray by synchrotron radiation; Elimination of partly terminated hydrogen; Detection of photostimulated desorption of hydrogen ions.


Related Articles

  • Low-temperature synchrotron-radiation-excited etching of silicon dioxide with sulfur hexafluoride adsorption. Ogawa, Taro; Mochiji, Kozo; Ochiai, Isao; Yamamoto, Seiji; Tanaka, Kenichiro // Journal of Applied Physics;5/1/1994, Vol. 75 Issue 9, p4680 

    Deals with a study which examined synchrotron-radiation-excited etching of silicon oxide and silicon from the viewpoints of pattern replicability and analysis of etching selectivity between two layers. Methods; Results; Discussion.

  • Structural changes of silicon dioxide films caused by synchrotron irradiation. Park, Young-Bae; Rhee, Shi-Woo; Imaizumi, Y.; Urisu, T. // Journal of Applied Physics;7/15/1996, Vol. 80 Issue 2, p1236 

    Deals with a study which investigated the effect of synchrotron radiation on silicon oxide films deposited with remote plasma-enhanced chemical-vapor deposition. Application in chemical vapor deposition; Beam line used for the study; Conclusion.

  • HfO[sub 2]/SiO[sub 2] interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy. Renault, O.; Samour, D.; Damlencourt, J.-F.; Blin, D.; Martin, F.; Marthon, S.; Barrett, N. T.; Besson, P. // Applied Physics Letters;11/4/2002, Vol. 81 Issue 19, p3627 

    X-ray photoelectron spectroscopy using synchrotron radiation has been used to investigate the HfO[sub 2]/SiO[sub 2] interface chemistry of high-quality 0.6 and 2.5 nm HfO[sub 2]/0.6 nm SiO[sub 2]/Si structures. The high energy resolution (0.15 eV) along with the high brightness level allows us...

  • Scanning tunneling microscopy study of Si(111) surface morphology after removal of SiO[sub 2] by synchrotron radiation illumination. Gao, Y.; Mekaru, H.; Miyamae, T.; Urisu, T. // Applied Physics Letters;3/13/2000, Vol. 76 Issue 11 

    The surface morphology of Si(111) was investigated using scanning tunneling microscopy after desorption of surface SiO[sub 2] by synchrotron radiation (SR) illumination. The surface shows large regions of atomically flat Si(111)-7x7 structure, and is characterized by the formation of single...

  • Synchrotron-radiation-induced deposition of boron and boron carbide films from boranes and carboranes: Decaborane. Perkins, F. Keith; Rosenberg, R. A.; Lee, Sunwoo; Dowben, P. A. // Journal of Applied Physics;4/1/1991, Vol. 69 Issue 7, p4103 

    Provides information on a study concerning the deposition of boron and boron carbide films through synchrotron radiation. Process of decaborane decomposition; Behavior of boron films in cases of dissociative adsorption; Discussion of synchrotron-radiation growth rate in boron films.

  • A photoemission study of the surface carbonate species on Ag{110}. Ricken, D. E.; Somers, J. S.; Robinson, A. W.; Bradshaw, A. M. // Journal of Chemical Physics;6/15/1991, Vol. 94 Issue 12, p8592 

    The electronic structure of the surface carbonate species adsorbed on Ag{110} has been studied with angle-resolved photoemission using synchrotron radiation. Despite the low symmetry of the surface complex (Cs) and more than one azimuthal orientation of the vertical symmetry plane, it has been...

  • Oxidation of the porous silicon surface under the action of a pulsed ionic beam: XPS and XANES studies. Bolotov, V.; Ivlev, K.; Korusenko, P.; Nesov, S.; Povoroznyuk, S. // Physics of the Solid State;Jun2014, Vol. 56 Issue 6, p1256 

    The changes in the electronic structure and phase composition of porous silicon under action of pulsed ionic beams have been studied by X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES) using synchrotron radiation. The Si 2 p and O 1 s core photoemission...

  • Area-selective deposition of self-assembled monolayers on SiO2/Si(100) patterns. Wang, Changshun; Pan, Xu; Sun, Cunying; Urisu, Tsuneo // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p233105 

    Area-selective deposition of self-assembled monolayers (SAMs) has been demonstrated on patterns of SiO2/Si(100). The pattern was fabricated by synchrotron radiation stimulated etching of SiO2 thin films on Si substrate. Several kinds of the patterns were obtained with different types of masks. A...

  • Size dependence of Si 2p core-level shift at Si nanocrystal/SiO2 interfaces. Kim, Sung; Kim, Min Choul; Choi, Suk-Ho; Kim, Kyung Joong; Hwang, Han Na; Hwang, Chan Cook // Applied Physics Letters;9/3/2007, Vol. 91 Issue 10, p103113 

    Synchrotron-radiation x-ray photoelectron spectroscopy (XPS) has been used to analyze size-dependent Si 2p core-level spectra of Si nanocrystals (NCs) embedded in SiO2. The Si0 and suboxide XPS peaks of Si NCs shift to higher binding energies with decreasing NC size, which is based on the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics