TITLE

High-frequency operation of heavily carbon-doped Ga[sub 0.51]In[sub 0.49]P/GaAs surface-emitting

AUTHOR(S)
de Lyon, T.J.; Woodall, J.M.; McInturff, D.T.; Kirchner, P.D.; Kash, J.A.; Bates, R.J.S.; Hodgson, R.T.; Cardone, F.
PUB. DATE
July 1991
SOURCE
Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p402
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines heavily carbon-doped gallium indium phosphide/gallium arsenide (GaAs) high-frequency operation grown by metalorganic molecular beam epitaxy. Utilization of trimethylgallium in doping GaAs active layer; Reduction of radiative lifetime in GaAs; Determination of transient optical response.
ACCESSION #
4322437

 

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