Application of oxidation to the structural characterization of SiC epitaxial films

Powell, J.A.; Petit, J.B.; Edgar, J.H.; Jenkins, I.G.; Matus, L.G.; Choyke, W.J.; Clemen, L.; Yoganathan, M.; Yang, J.W.; Pirouz, P.
July 1991
Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p183
Academic Journal
Examines the effect of oxidation on the structural characterization of silicon carbide epitaxial films. Quality and doping levels of crystals; Production of interference colors of oxides on SiC films; Summary of observed oxide interference colors and thicknesses.


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