Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance

Krtschil, A.; Witte, H.; Lisker, M.; Christen, J.; Birkle, U.; Einfeldt, S.; Hommel, D.
April 1999
Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p2032
Academic Journal
Investigates optical transitions between the bands and electronic states in n-type gallium nitride (GaN) layers grown by molecular beam epitaxy on sapphire substrates using an electron cyclotron resonance or a radio frequency nitrogen plasma source. Optical admittance spectroscopy; Spectra of all layers; Structural inhomogeneities.


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