TITLE

Design and construction of a rapid thermal processing system for in situ optical measurements

AUTHOR(S)
Conrad, K.A.; Sampson, R.K.; Massoud, H.Z.; Irene, E.A.
PUB. DATE
November 1996
SOURCE
Review of Scientific Instruments;Nov96, Vol. 67 Issue 11, p3954
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study that described a rapid thermal processing system incorporating features that enable in situ optical measurements. System incorporating an in situ spectroscopic ellipsometer; Unusual features necessary for ellipsometry measurements; Applications in systems for other optical measurements.
ACCESSION #
4321030

 

Related Articles

  • Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry. Shokhovets, S.; Goldhahn, R.; Gobsch, G.; Piekh, S.; Lantier, R.; Rizzi, A.; Lebedev, V.; Richter, W. // Journal of Applied Physics;7/1/2003, Vol. 94 Issue 1, p307 

    We demonstrate that variable angle spectroscopic ellipsometry (SE) is capable of determining both ordinary and extraordinary dielectric functions (DFs) in the transparent region of group III nitride wurtzite films even if the optical axis is oriented normal to the surface plane. In contrast to...

  • SDSS Spectroscopic Surveys. Ivezic, ZⰇeljko // AIP Conference Proceedings;9/28/2007, Vol. 938 Issue 1, p11 

    In addition to optical photometry of unprecedented quality, the Sloan Digital Sky Survey is also producing a massive spectroscopic database: recent public Data Release 6 contains 1.27 million spectra of stars, galaxies, quasars and blank sky selected over 7425 square degrees. I summarize the...

  • Photovoltaic Device Characterization Using the UVISEL Spectroscopic Ellipsometer. Teboul, Eric // Spectroscopy;Sep2007 Supplement, Vol. 22, p15 

    The article provides information on the functions of photovoltaic devices using UVISEL Spectroscopic Ellipsometer. It is defined as a multi-layer structures wherein various materials including transparent conductive oxides, light-absorbing materials and anti-reflection coatings are combined to...

  • Horizontal molecular orientation in vacuum-deposited organic amorphous films of hole and electron transport materials. Yokoyama, Daisuke; Sakaguchi, Akio; Suzuki, Michio; Adachi, Chihaya // Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p173302 

    Using wide-range variable angle spectroscopic ellipsometry, the authors demonstrate large optical uniaxial anisotropy of vacuum-deposited organic amorphous films of hole and electron transport materials having long or planar molecular structures. The ordinary refractive indices and extinction...

  • a-Si:H/c-Si heterointerface formation and epitaxial growth studied by real time optical probes. Gielis, J. J. H.; van den Oever, P. J.; van de Sanden, M. C. M.; Kessels, W. M. M. // Applied Physics Letters;5/14/2007, Vol. 90 Issue 20, p202108 

    The deposition of amorphous and epitaxial silicon thin films on H-terminated Si(100) has been studied in real time by the simultaneous application of spectroscopic ellipsometry, attenuated total reflection infrared spectroscopy, and optical second-harmonic generation. The morphology development...

  • Vibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry. Rogowsky, S.; Baeumler, M.; Wolfer, M.; Kirste, L.; Ostendorf, R.; Wagner, J.; Liebich, S.; Stolz, W.; Volz, K.; Kunert, B. // Journal of Applied Physics;Mar2011, Vol. 109 Issue 5, p053504 

    The influence of boron incorporation in BxGa1-xP (0 < x ≤ 6%) layers on the dielectric function spectrum and on the vibrational mode spectrum has been studied. BGaP layers were grown by metal-organic vapor phase epitaxy, using a GaP interlayer, on Si and, for reference purposes, also on...

  • Optical index profile of nonuniform depth-distributed silicon nanocrystals within SiO2. Barba, D.; Dahmoune, C.; Martin, F.; Ross, G. G. // Journal of Applied Physics;Jan2009, Vol. 105 Issue 1, p013521 

    Optical properties of silicon nanocrystals (Si-ncs) prepared by silicon implantation into silicon oxide have been investigated by photoluminescence measurements and spectroscopic ellipsometry. The dielectric function associated with Si-nc uniformly and nonuniformly depth distributed has been...

  • Innovations in ellipsometry facilitate thin-film analysis. Teboul, Eric // Laser Focus World;Nov2008, Vol. 44 Issue 11, p76 

    The article provides information on the technological innovation in ellipsometry. It is stated that such innovation is able to facilitate thin-film analysis. The advanced thin-film metrology tool based on spectroscopic ellipsometry and dedicated to the measurements of blank and patterned wafers...

  • Anisotropic damping of longitudinal optical phonon-plasmon coupling modes of InN films. Ishitani, Yoshihiro; Fujiwara, Masayuki; Wang, Xinqiang; Che, Song-Bek; Yoshikawa, Akihiko // Applied Physics Letters;6/23/2008, Vol. 92 Issue 25, p251901 

    The energy broadenings of the higher energy branch of the longitudinal optical (LO) phonon-plasmon coupling modes for E1(LO) and A1(LO) are analyzed for InN films by infrared reflectance and spectroscopic ellipsometry. Larger broadening for the vibration parallel to c of A1(LO)-plasmon coupling...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics