High temperature coefficient of resistance in vanadium oxide diodes

Kuznetsov, V.A.; Haneman, D.
March 1997
Review of Scientific Instruments;Mar97, Vol. 68 Issue 3, p1518
Academic Journal
Discusses evidence regarding the high temperature coefficient of resistance in vanadium oxide multiple thin film diodes. Indication that the source is a vanadium oxide substance formed between multiple layers of deposited vanadium; Effects of top contacts; Devices' high sensitivity to mechanical pressure.


Related Articles

  • Switchable vanadium oxide films by a sol-gel process. Partlow, D. P.; Gurkovich, S. R.; Radford, K. C.; Denes, L. J. // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p443 

    Presents a study that examined the properties of thin polycrystalline films of vanadium oxide. Analysis of the microstructure of the thin films; Examination of the optical properties of the thin films; Evaluation of the electrical switching behavior of the thin films.

  • Optical properties of thin films of amorphous vanadium oxides. Kikalov, D. O.; Malinenko, V. P.; Pergament, A. L.; Stefanovich, G. B. // Technical Physics Letters;Apr99, Vol. 25 Issue 4, p331 

    The results of an experimental investigation of the optical properties of anodic vanadium oxide films are presented. It is shown that films of different phase composition (VO[sub 2], V[sub 2]O[sub 5], or a mixture of two phases) can be obtained, depending on the oxidation regime, and that the...

  • Molybdenum substitutional doping and its effects on phase transition properties in single... Wu, Z.P.; Miyashita, A. // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p5311 

    Focuses on a study which examined molybdenum substitutional doping and its effects on phase transition properties in single crystalline vanadium dioxide thin films during pulsed ablation process. Experimental procedure; Results and discussion; Conclusion.

  • Pulsed laser deposition of oriented VO[sub 2] thin films on R-cut sapphire substrates. Borek, Mark; Qian, F. // Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3288 

    Examines the pulsed laser deposition of oriented vanadium oxide (VO[sub 2]) films on R-cut sapphire substrates. Factors attributing the stabilization of pure vanadium oxides; Discussion on the deposition parameters for the fabrication of VO[sub 2] thin films; Observation of sharp resistivity...

  • Structural and electrical properties of sputtered vanadium oxide thin films for applications as... Manno, D.; Serra, A. // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2709 

    Presents the results of a structural and morphological investigation by conventional transmission electron microscopy, high resolution electron microscopy and nanodiffraction methods on vanadium oxide films. Structural and morphological analysis; Electrical characterization.

  • Publisher's Note: 'Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film' [Appl. Phys. Lett. 102, 072106 (2013)]. Kar, Ayan; Shukla, Nikhil; Freeman, Eugene; Paik, Hanjong; Liu, Huichu; Engel-Herbert, Roman; Bharadwaja, S. S. N.; Schlom, Darrell G.; Datta, Suman // Applied Physics Letters;9/16/2013, Vol. 103 Issue 12, p129904 

    A correction to the article "Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film" that was published in the September 16, 2013 issue is presented.

  • Ellipsometric investigation of vanadium dioxide films. Swann, J. T.; De Smet, D. J. // Journal of Applied Physics;8/1/1985, Vol. 58 Issue 3, p1335 

    Discusses a study that determines the thickness and refractive indices of thermally formed vanadium dioxide films ranging in thickness from about 5.0 to about 150.0 nanometre. Changes in the physical properties of the oxide; Application of the technique ellipsometry; Computations of the real...

  • Characterization of epitaxially grown films of vanadium oxides. Rogers, K. D.; Coath, J. A.; Lovell, M. C. // Journal of Applied Physics;8/1/1991, Vol. 70 Issue 3, p1412 

    Presents a study that investigated the growth of vanadium oxide thin films by reactive sputtering. Method; Analysis techniques; Results; Discussion.

  • High sensitivity to temperature and quantum effects in vanadium oxide diodes. Kuznetsov, V. A.; Haneman, D. // Journal of Applied Physics;5/15/1996, Vol. 79 Issue 10, p8109 

    Focuses on a study which fabricated vanadium oxide diodes with high sensitivity to temperature. Background on vanadium oxide films; Importance of using point of contacts; Information on switching properties.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics