Correlation between the O... induced electron emission coefficient and the removal rate of Cu

Wittmaack, K.; Homma, Y.
May 1991
Applied Physics Letters;5/13/1991, Vol. 58 Issue 19, p2138
Academic Journal
Studies sputter removal of thin overlayers of copper (Cu) on silicon (Si), using 10 keV O[sub 2+] primary ions at near-normal incidence. Decay length characterized by the exponential fall-off of the Cu signal; Correlation between decay length and carrier type, dopant concentration, polarity and strength of the electric field.


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