Comment on 'Buffer-induced modulation of carrier density and mobility in a selectively doped

Vuong, T.H.H.; Reynolds Jr., C.L.; Singleton, J.
January 1994
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p667
Academic Journal
Comments on the buffer-induced modulation of carrier density and mobility in a selectively doped heterostructure. Existence of a two-dimensional electron gas (2DEG) below the superlattice buffer; Relation between 2DEG and interface impurities; Influence of 2DEG on field-effect transistors.


Related Articles

  • Piezoelectric doping in AlInGaN/GaN heterostructures. Khan, M. Asif; Yang, J. W.; Simin, G.; Gaska, R.; Shur, M. S.; Bykhovski, A. D. // Applied Physics Letters;11/1/1999, Vol. 75 Issue 18, p2806 

    We report on the piezoelectric doping and two-dimensional (2D) electron mobility in AlInGaN/GaN heterostructures grown on 6H-SiC substrates. The contribution of piezoelectric doping to the sheet electron density was determined using an In-controlled built-in strain- modulation technique. Our...

  • Transport properties of selectively doped GaAs-(AlGa)As heterostructures grown by molecular beam epitaxy. Hwang, J. C. M.; Kastalsky, A.; Störmer, H. L.; Keramidas, V. G. // Applied Physics Letters;1984, Vol. 44 Issue 8, p802 

    In selectively doped GaAs-(AlGa)As heterostructures the two-dimensional (2D) electron density is found to be monotonically decreasing with increasing separation (t0) between the mobile carriers and the doped (AlGa)As layer. A quantitative description of this t0 dependence requires the Si dopant...

  • Vertical design of cubic GaN-based high electron mobility transistors. Granzner, R.; Tschumak, E.; Kittler, M.; Tonisch, K.; Jatal, W.; Pezoldt, J.; As, D.; Schwierz, F. // Journal of Applied Physics;Dec2011, Vol. 110 Issue 11, p114501 

    Cubic (zinc blende) AlGaN/GaN heterostructures for application in GaN-based high electron mobility transistors are investigated theoretically. The formation of 2DEGs (two-dimensional electron gas) in cubic AlGaN/GaN structures is studied, carrier distributions and threshold voltages are...

  • Drift and diffusion in low-dimensional p-n junctions. Sadra, K.; Streetman, B. G. // Journal of Applied Physics;3/1/1994, Vol. 75 Issue 5, p2516 

    Presents a theoretical drift-and-diffusion study of current-voltage characteristics of low-dimensional p-n junctions. Calculation of electron contribution to the small-signal admittance; Densities of states for two-dimensional systems of electrons and holes; Concentration dependence of the...

  • Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures. Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. // Semiconductors;Jul2010, Vol. 44 Issue 7, p919 

    Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm/(V...

  • Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density. Khabibullin, R.; Vasil'evskii, I.; Galiev, G.; Klimov, E.; Ponomarev, D.; Lunin, R.; Kulbachinskii, V. // Semiconductors;Oct2011, Vol. 45 Issue 10, p1321 

    Molecular-beam epitaxy is used for growing structures differing in doping technique and doping level and having a high two-dimensional-electron concentration n in the quantum well. The effect of doping combining uniform and δ doping on the electron-transport properties of heterostructures is...

  • Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures. Tokuda, Hirokuni; Kojima, Toshikazu; Kuzuhara, Masaaki // Applied Physics Letters;12/24/2012, Vol. 101 Issue 26, p262104 

    A mechanism for ohmic contact formation using Ti/Al based metals on AlGaN/GaN heterostructures has been investigated by measuring temperature dependence of sheet electron density (ns) and mobility (μ). It was found that both ns and μ at room temperature for Ti/Al deposited sample were...

  • Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation. Monsef, Florian; Dollfus, Philippe; Galdin-Retailleau, Sylvie; Herzog, Hans-Joest; Hackbarth, Thomas // Journal of Applied Physics;4/1/2004, Vol. 95 Issue 7, p3587 

    The electron transport in two-dimensional gas formed in tensile-strained Si[sub 1-x]Ge[sub x]/Si/Si[sub 1-x]Ge[sub x] heterostructures is investigated using Monte Carlo simulation. First the electron mobility is studied in ungated modulation-doped structures. Calculation matches the experimental...

  • Temperature dependence of the electron mobility in GaAs-GaAlAs heterostructures. Mendez, E. E.; Price, P. J.; Heiblum, M. // Applied Physics Letters;1984, Vol. 45 Issue 3, p294 

    We have studied the temperature dependence of the mobility of two-dimensional electron gases formed at the interface of high-quality GaAs-GaAlAs heterostructures, focusing on the temperature range 4-40 K. The inverse mobility is shown to increase linearly with temperature, with a slope which...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics