TITLE

Effect of using pure ozone on in situ molecular beam epitaxy of YBa[sub 2]Cu[sub 3]O[sub 7-x]

AUTHOR(S)
Sawa, Akihito; Obara, Haruhiko; Kosaka, Shin
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p649
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effect of pure ozone on molecular beam epitaxy of YBa[sub 2]Cu[sub 3]O[sub 7-delta] (YBCO) films. Minimum ozone flux required for YBCO film synthesis; Deposition of films at various growth rates and ozone fluxes; Relation between the minimal ozone flux and growth rate.
ACCESSION #
4319567

 

Related Articles

  • Virtual-surfactant epitaxy of strained InAs/Al[sub 0.48]In[sub 0.52]As quantum wells. Tournie, Eric; Ploog, Klaus H. // Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p858 

    Examines the molecular beam epitaxy growth of strained indium arsenide film embedded in an Al[sub 0.48]In[sub 0.52]As matrix grown on InP substrate. Use of reflection high-energy electron diffraction; Regulation of growth condition by a 'virtual-surfactant'; Alternative route for strained...

  • Growth and properties of (Ga,Mn)As films with high Mn concentration. Takamura, K.; Matsukura, F.; Ohno, Y.; Ohno, H. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p7024 

    (Ga, Mn)As films with high nominal Mn concentration (0

  • Femtosecond studies of carrier dynamics in InGaN. Sun, C.-K.; Vallee, F. // Applied Physics Letters;4/14/1997, Vol. 70 Issue 15, p2004 

    Investigates the carrier dynamics of indium gallium nitride films using femtosecond transient transmission measurements. Details on the time scale of the initial carrier cooling; Implication of the hot phonon effect on the relaxation process; Application of molecular beam epitaxy.

  • Enhanced electro-optic properties of low-temperature-growth GaAs and AlGaAs. Nolte, D.D.; Melloch, M.R.; Woodall, J.M.; Ralph, S.J. // Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1356 

    Examines the enhanced electro-optic properties of low-temperature-growth (LTG) molecular beam epitaxial films of GaAs and AlGaAs. Use of LTG GaAs as buffer layer for electrical isolation; Effects of proton implantation on electrooptic properties; Measurement of LTG GaAs electroabsorption.

  • Engineering of ultrathin barriers in high T[sub c], trilayer Josephson junctions. Klausmeier-Brown, M.E.; Virshup, G.F. // Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2806 

    Analyzes the engineering of ultrathin barriers in high T[sub c] trilayer films grown by atomic layer-by-layer molecular beam epitaxy. Details on composition and separation of the top and bottom electrodes of the films; Systematic variation of bismuth doping on calcium sites in the barrier...

  • Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films: Nucleation of “quantum fortresses”. Gray, Jennifer L.; Hull, Robert; Floro, Jerrold A. // Applied Physics Letters;9/23/2002, Vol. 81 Issue 13, p2445 

    The surface morphology of Si[sub 0.7]Ge[sub 0.3] films grown at 550 °C by molecular-beam epitaxy is found to be highly controllable through changes in growth rate. A growth rate of 0.9 Å/s results in a surface morphology that begins as shallow pyramidal pits, which then become decorated...

  • Large temperature changes induced by molecular beam epitaxial growth on radiatively heated.... Shanabrook, B.V.; Waterman, J.R. // Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2338 

    Examines large temperature changes induced by molecular beam epitaxial growth of indium arsenide, gallium antimonide, aluminum antimonide, and gallium arsenide (GaAs) films. Decrease of energy gap of the GaAs substrate; Difficulty of observing the changes; Feasibility of the optical absorption...

  • Raman spectroscopic study on the wirelike incorporation of Si dopant atoms on GaAs(001) vicinal.... Ramsteiner, M.; Wagner, J.; Behr, D.; Jungk, G.; Daweritz, L.; Hey, R. // Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p490 

    Demonstrates the use of Raman scattering to study silicon delta-doped gallium arsenide layers grown by molecular beam epitaxy on GaAs vicinal surfaces. Incorporation of Si dopant atoms on Ga sites; Polarization asymmetry in the Raman scattering; Establishment of real-time high-energy electron...

  • Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy. Lee, Henry P.; Liu, Xiaoming; Wang, Shyh; George, Thomas; Weber, Eicke R. // Applied Physics Letters;6/26/1989, Vol. 54 Issue 26, p2695 

    GaAs films were grown on Si substrates by a two-step method in which a thin buffer layer was first deposited using a modulated molecular beam epitaxy (MBE) technique followed by a thick layer grown by conventional molecular beam epitaxy. The film quality was evaluated using 77 K...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics