TITLE

Cryogenic field-effect transistor with single electronic charge sensitivity

AUTHOR(S)
Mar, D.J.; Westervelt, R.M.; Hopkins, P.F.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p631
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates a cryogenic field-effect transistor with single electronic charge sensitivity. Application of low leakage on direct current charge-coupled operation; Characterization of channel noise; Resolution of charge differences.
ACCESSION #
4319561

 

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