TITLE

Doped microcrystalline silicon growth by high frequency plasmas

AUTHOR(S)
Hollingsworth, R.E.; Bhat, P.K.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p616
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of boron and phosphorus-doped microcrystalline silicon films using plasma enhanced chemical vapor deposition. Application of heavy hydrogen dilution of silane for microcrystalline growth; Use of phosphine or trimethylboron as the doping gas; Maximum conductivity of doped Si films.
ACCESSION #
4319555

 

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