Surface resonant tunneling transistor: A new negative transconductance device

Kurdak, C.; Tsui, D.C.; Parihar, S.; Santos, M.B.; Manoharan, H.C.; Lyon, S.A.; Shayegan, M.
January 1994
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p610
Academic Journal
Fabricates a three-terminal device surface resonant tunneling transistor. Application of molecular beam epitaxy; Use of modulation-doped field-effect transistors and resonant tunneling diodes in high frequency applications; Characteristics of the device.


Related Articles

  • Novel GaAs voltage-controllable negative differential resistance transistor prepared by molecular beam epitaxy. Yarn, K. F.; Wang, Y. H.; Chang, C. Y. // Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1157 

    A three-terminal n+-i-δp+-i-n+ bipolar–unipolar transition transistor has been successfully fabricated by molecular beam epitaxy. Due to the combination of the two transitions, they make a genuine N-shaped current-voltage characteristic. It is a voltage-controlled device with a...

  • Evaluation of molecular beam epitaxially grown AlGaAs/GaAs heterojunctions for bipolar transistor with InGaAs emitter contact layer. Izumi, Shigekazu; Sakai, Masayuki; Shimura, Teruyuki; Hayafuji, Norio; Sato, Kazuhiko; Otsubo, Mutsuyuki // Applied Physics Letters;10/21/1996, Vol. 69 Issue 17, p2516 

    Molecular beam epitaxially grown AlGaAs/GaAs heterojunctions were characterized by isothermal capacitance transient spectroscopy to study the performance of bipolar transistors with lattice-mismatched InGaAs emitter contact layer. A deep level around 0.48 eV is found to be a recombination center...

  • Dc characterization of the Ga[sub 0.51]In[sub 0.49]P/GaAs tunneling emitter bipolar transistor. Lu, S.S.; Wu, C.C. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2138 

    Investigates the fabrication of Ga[sub 0.51]In[sub 0.49]P/gallium arsenide tunneling emitter bipolar transistors grown by gas source molecular beam epitaxy. Measurement of the bipolar transistors at varying temperatures; Comparison between the thick and thin barriers in terms of current gain;...

  • Modeling of the static properties for double-δ transistors. Schulze, D.; Gobsch, G.; Eisele, I.; Kiunke, W. // Journal of Applied Physics;3/1/1994, Vol. 75 Issue 5, p2502 

    Studies the modeling of the static properties of double-delta transistors. Application of growth techniques of silicon molecular-beam epitaxy; Growth of the doped delta layers; Method used in vertical electrical transport measurements in the double-delta transistor.

  • Light emitting charge injection transistor with p-type collector. Mastrapasqua, Marco; Capasso, Federico // Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2415 

    Investigates the light emitting charge injection transistor with p-type collector. Use of the indium gallium arsenide/indium aluminum arsenide/indium gallium arsenide heterostructure to implement the device; Application of molecular beam epitaxy; Value of the observed on/off ratio in the...

  • Molecular beam epitaxial growth of InGaAlAs/InGaAs heterojunction bipolar transistors on highly.... Dodabalapur, A.; Chang, T.Y. // Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2796 

    Studies the molecular beam epitaxial growth of indium gallium aluminum arsenide/indium gallium arsenide heterojunction bipolar transistors. Proposal for the use of highly resistive epilayers; Isolation of indium phosphorus substrates on various devices; Demonstration of the growth of the...

  • Characterization of a GaAs current-controlled bipolar-unipolar transition negative differential resistance transistor. Yarn, K. F.; Wang, Y. H.; Chang, C. Y. // Applied Physics Letters;8/20/1990, Vol. 57 Issue 8, p777 

    GaAs current-controlled bipolar-unipolar transition negative differential resistance (NDR) transistors using an n+-i-p+-i-n+ homojunction structure prepared by molecular beam epitaxy are demonstrated. For a base thickness of 200 Ã… and using a highly doped sheet concentration of 1013 cm-2, a...

  • Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure. Yan, D.; Pollak, Fred H.; Boccio, V.T.; Lin, C.L.; Kirchner, P.D.; Woodall, J.M.; Gee, Russell C.; Asbeck, Peter M. // Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2066 

    Examines the photoreflectance spectrum from a lattice-matched InP/InGaAs heterojunction bipolar transistor. Application of gas-source molecular beam epitaxy; Evaluation of the built-in direct current electric fields; Verification of the lattice-matched nature of the system.

  • AlGaAs/GaAs single heterojunction bipolar transistors grown on InP by molecular beam epitaxy. Agarwala, S.; Won, T.; Morkoç, H. // Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1151 

    AlGaAs/GaAs single heterojunction bipolar transistors grown on InP substrates by molecular beam epitaxy have been fabricated and tested. An eight-period 25 Ã…/25 Ã… In0.53Ga0.47As/GaAs strained-layer superlattice is incorporated in the buffer structure to reduce dislocation propagation to...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics