Characterization of Si/Si[sub 1-x]Ge[sub x]/Si quantum wells by cathodoluminescence imaging and

Higgs, V.; Lightowlers, E.C.; Xiao, X.; Sturm, J.C.
January 1994
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p607
Academic Journal
Characterizes silicon (Si)/Si[sub 1-x]Ge[sub x]/Si quantum wells by cathodoluminescence (CL) imaging and spectroscopy. Feasibility of using CL; Stability of the nonradiative recombination centers; Identification of nonradiative centers responsible for the dark spots.


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