Study of reactive ion etching-induced damage in GaAs/AlGaAs structures using a quantum well

Ooi, B.S.; Bryce, A.C.; Wilkinson, C.D.W.; Marsh, J.H.
January 1994
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p598
Academic Journal
Investigates the reactive ion etching (RIE)-induced damage in gallium arsenide/aluminum gallium arsenide structures using quantum well intermixing (QWI) probes. Measurement of the photoluminescence emission; Efficacy of the QWI probing technique; Observation of damage depth and blue shifts in varying RIE regions.


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