TITLE

Coulomb blockade in the inversion layer of a Si metal-oxide-semiconductor field-effect

AUTHOR(S)
Matsuoka, Hideyuki; Ichiguchi, Tsuneo; Yoshimura, Toshiyuki; Takeda, Eiji
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p586
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the transport properties of inversion layers in a silicon metal-oxide-semiconductor field-effect transistor with a dual-gate structure. Transformation of simple quantum wire to quantum dots; Link of transport properties with tunnel barrier height; Analysis of the Coulomb blockade in single-electron tunneling.
ACCESSION #
4319544

 

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