TITLE

Growth of (100) oriented CdTe on Si using Ge as a buffer layer

AUTHOR(S)
Bhat, Ishwara; Wen-Sheng Wang
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p566
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the epitaxial growth of (100) oriented cadmium telluride (CdTe) layers on silicon substrates using germanium as a buffer layer. Application of atmospheric pressure organometallic vapor phase epitaxy; Problem encountered in growing high quality CdTe; Influence of growth temperature on the CdTe epilayer orientation.
ACCESSION #
4319535

 

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