TITLE

Growth of oriented diamond on single crystal of silicon carbide (0001)

AUTHOR(S)
Suzuki, T.; Yagi, M.; Shibuki, K.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p557
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the epitaxial growth of diamond on (0001) silicon carbide single crystal. Application of the microwave method; Determination of cubo-octahedral diamond crystals; Use of hydrogen gas for substrate surface cleaning.
ACCESSION #
4319532

 

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