Analysis of origin of nonlinear gain in 1.5 mum semiconductor active layers by highly

Kikuchi, K.; Amano, M.; Zah, C.E.; Lee, T.P.
January 1994
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p548
Academic Journal
Examines the origin of nonlinear gain in semiconductor active layers by highly nondegenerate four-wave mixing. Role of spectral hole burning and dynamic carrier heating in third-order optical nonlinearity; Assumption on the operation of a semiconductor active layer; Effect of cross-phase modulation on phase-matching conditions.


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