Monolayer thickness fluctuations in infrared photoluminescence for [211]-oriented HgTe-CdTe

Meyer, J.R.; Reisinger, A.R.; Harris, K.A.; Yanka, R.W.; Mohnkern, L.M.
January 1994
Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p545
Academic Journal
Examines the monolayer thickness fluctuations in infrared photoluminescence for [211]-oriented HgTe-CdTe superlattices. High growth quality indications of double and triple peaks; Use of a band-to-band model; Calculation of energy gaps using an eight-band transfer-matrix algorithm.


Related Articles

  • Tunable photoluminescence of uniformly doped short-period GaAs doping superlattices. Choquette, Kent D.; McCaughan, Leon; Misemer, D. K.; Potts, J. E.; Vernstrom, G. D. // Journal of Applied Physics;3/15/1992, Vol. 71 Issue 6, p2805 

    Argues that radiative recombination between spatially arranged donor and acceptor states associated to the random fluctuations in the superlattice potential occurs in superlattices with periods less than 20 nautical mile. Characteristics of uniformly doped n-p gallium arsenide doping...

  • Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys. Krestnikov, I. L.; Heitz, R.; Ledentsov, N. N.; Hoffmann, A.; Mintairov, A. M.; Kosel, T. H.; Merz, J. L.; Soshnikov, I. P.; Ustinov, V. M. // Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3728 

    We have studied the optical properties of pseudo-alloy monolayer InAs/GaAsN superlattices with highly planar interfaces. In spite of the two-dimensional growth mode, we found that the photoluminescence (PL) reveals strong exciton localization through the whole PL band, dominating the spectrum up...

  • Photoluminescence Study of Potential Fluctuations in 2.5 and 3 Monolayers Thick CdSe Ultra-Thin Quantum Wells. Hernández-Calderón, Isaac; Alfaro-Martínez, Adrián // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p153 

    CdSe ultra-thin quantum wells (UTQWs) can be grown by atomic layer epitaxy (ALE) without thickness fluctuations. However, the evolution of the excitonic peak energy as a function of temperature exhibits an S-shaped curve typical of potential fluctuations. These are originated from small...

  • Photoluminescence and pressure effects in short period InN/nGaN superlattices. Staszczak, G.; Gorczyca, I.; Suski, T.; Wang, X. Q.; Christensen, N. E.; Svane, A.; Dimakis, E.; Moustakas, T. D. // Journal of Applied Physics;Mar2013, Vol. 113 Issue 12, p123101 

    Measurements of photoluminescence and its dependence on hydrostatic pressure are performed on a set of InN/nGaN superlattices with one InN monolayer and with different numbers of GaN monolayers. The emission energies, EPL, measured at ambient pressure, are close to the value of the band gap, Eg,...

  • Tight-binding study of the strained monolayer superlattices (Si)1/(Si1-xGex)1 (100). Shen, Dingli; Lu, Fen; Zhang, Kaiming; Xie, Xide // Applied Physics Letters;5/9/1988, Vol. 52 Issue 19, p1599 

    Electronic structures of strained monolayer superlattices (Si)1/(Si1-xGex)1 are calculated within the tight-binding scheme by taking into consideration the effect of stress on atomic interactions. Gap variations with composition and band offsets for different strain conditions are obtained. When...

  • Consequence of layer thickness fluctuations on superlattice miniband structures. Davies, R. A.; Kelly, M. J.; Kerr, T. M. // Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2641 

    The miniband structure of a perfect superlattice depends on the thicknesses and compositions of the constituent layers. We describe simple modeling of the consequences of fluctuations in the layer thickness. Experimental results from an asymmetric superlattice tunnel diode, where the presence of...

  • Step-flow growth on strained surfaces: (Al,Ga)Sb tilted superlattices. Chalmers, S. A.; Kroemer, H.; Gossard, A. C. // Applied Physics Letters;10/22/1990, Vol. 57 Issue 17, p1751 

    We have demonstrated the molecular beam epitaxial growth of (Al,Ga)Sb tilted superlattices (TSLs) on 2° vicinal (100) GaSb and GaAs substrates. The TSLs grown on GaSb substrates exhibit good AlSb/GaSb separation and a uniform short-range superlattice period. The TSLs grown on GaAs substrates...

  • Localization and Transport of Type-II Excitons in Spatially Enhanced Random Potential for Highly Si-Doped GaAs/AlAs Short-Period-Superlattices. Kobori, H.; Shigetani, A.; Umezu, I.; Sugimura, A. // AIP Conference Proceedings;2006, Vol. 850 Issue 1, p1520 

    Through the time-resolved photoluminescence measurements, we have studied the localization and transport of the type-II excitons in spatially random potential for highly Si-doped GaAs/AlAs short-period-superlattices (SPS’s). The exciton transport analysis has been carried out according to...

  • Bulk and interfacial thermodynamics of a symmetric, ternary homopolymer–copolymer mixture: A Monte Carlo study. Müller, M.; Schick, M. // Journal of Chemical Physics;11/15/1996, Vol. 105 Issue 19, p8885 

    We present results of a Monte Carlo simulation of a dense blend, comprising two incompatible homopolymers and a symmetric diblock copolymer, all of the same degree of polymerization. The simulations, in the framework of the bond fluctuation model, yield information on the phase diagram. At high...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics