Effect of Ag[sub 2]O addition in Y[sub 0.9]Ca[sub 0.1]Ba[sub 2]Cu[sub 4]O[sub 8] on the contact

Chen, Y.C.; Yang, C.K.; Meen, T.H.; Yang, H.D.
December 1994
Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3392
Academic Journal
Investigates the effects of silver oxide on Y[sub 0.9]Ca[sub 0.1]Ba[sub 2]Cu[sub 4]O[sub 8]/silver interfaces. Measurement of the ohmic-contact resistivity at the interface; Preparation of the compound by nitrite pyrolysis; Dependence of resistance on temperature for Y[s0.9]ca[sub 0.1]Ba[sub 2]Cu[sub 4]O[sub 8].


Related Articles

  • Time dependent ballistic electron emission microscopy studies of a Au/(100)GaAs interface with a.... Talin, A. Alec; Ohlberg, Douglas A.A.; Williams, R. Stanley; Sullivan, Patrick; Koutselas, Ioannis; Williams, Beth; Kavanagh, Karen L. // Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2965 

    Examines the effects of a thin interfacial native oxide layer on the electronic properties and stability of gold/(100) n-gallium arsenide ohmic contact. Use of ballistic electron emission microscopy; Comparison of electronic band structure with similar contacts.

  • Pd/Zn/Pd/Au and Pd/Zn/Au/LaB[sub 6]/Au ohmic contacts to p-type In[sub 0.53]Ga[sub 0.47]As. Ressel, P.; Leech, P.W.; Reeves, G.K.; Zhou, W.; Kuphal, E. // Applied Physics Letters;3/25/1996, Vol. 68 Issue 13, p1841 

    Examines the resistivity and interfacial characteristics of Pd/Zn/Pd/Au and Pd/Zn/Au/LaB[SUB 6]/Au contacts to p-In[sub 0.53]Ga[sub 0.47]As. Implantation of zinc ions into the interfacial palladium; Degradation of In[sub 0.53]Ga[sub 0.47]As substrate; Effects of incorporating zinc layer of...

  • Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC:.... Waldrop, J.R.; Grant, R.W. // Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2685 

    Compares the electrical properties and interface chemistry of nickel (Ni), titanium (Ti), and aluminum (Al) ohmic contacts to silicon and carbon terminated faces of 6H-silicon carbide (SiC). Dissociation of interface SiC by Ni and Ti contacts; Formation of 6H-SiC interfaces in ultrahigh vacuum;...

  • Instability in a non-ohmic/ohmic fluid interface under a perpendicular electric field and unipolar injection. Vega, F.; Pe´rez, A. T. // Physics of Fluids;Aug2002, Vol. 14 Issue 8, p2738 

    We set the equations for the linear electrohydrodynamic instability of an interface between two fluids, subjected to a perpendicular field and a unipolar charge injection. One of the fluids is modeled as being in non-ohmic regime (insulating), whereas the other is ohmic. A new interfacial...

  • Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN. Luther, B.P.; DeLucca, J.M. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3859 

    Analyzes the presence of thin aluminum nitride (AlN) interfacial layer at gallium nitride interfaces of titanium/aluminum (Ti/Al) and palladium/aluminum (Pd/Al) ohmic contacts. Formation of interfacial AlN layers; Annealing of ohmic behavior in Ti/Al and Pd/Al contacts; Identification of space...

  • Interfacial microstructure and electrical properties of the Pt/Ti ohmic contact in p-In0.53Ga0.47As formed by rapid thermal processing. Chu, S. N. G.; Katz, A.; Boone, T.; Thomas, P. M.; Riggs, V. G.; Dautremont-Smith, W. C.; Johnston, W. D. // Journal of Applied Physics;4/15/1990, Vol. 67 Issue 8, p3754 

    Presents a study which examined the interfacial microstructure and electrical properties of the platinum/titanium ohmic contact to p-indium[sub0.53]gallium[sub0.47]arsenide formed by rapid thermal processing. Experimental details; Results and discussion; Conclusion.

  • Mechanism of forming ohmic contacts to GaAs. Holloway, Paul H.; Liu Lu-Min Yeh; Powell, David H; Brown, Alan // Applied Physics Letters;8/19/1991, Vol. 59 Issue 8, p947 

    Examines the mechanism behind the formation of ohmic contacts to gallium arsenide. Distribution of the silicon (Si) dopant at the gold/gallium arsenide interface; Reasons accounting for the concentration of Si at decomposed regions; Reduction of depletion distance.

  • Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n-type GaAs. Shih, Yih-Cheng; Murakami, Masanori; Wilkie, E. L.; Callegari, A. C. // Journal of Applied Physics;7/15/1987, Vol. 62 Issue 2, p582 

    Studies the effects of interfacial microstructure on uniformity and thermal stability of gold-nickel-germanium ohmic contact to n-type gallium arsenide. Experimental procedures; Experimental results; Discussion of findings.

  • Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN. Lim, S.-H.; Swider, W.; Washburn, J.; Liliental-Weber, Z. // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6364 

    Detailed structure of the interfacial layers of Ti/Ta/Al ohmic contacts to n-type AlGaN/GaN/sapphire are investigated by means of transmission electron microscopy. High-resolution electron microscopy (HREM), optical diffractograms, and computer simulations confirmed that TiN (∼10.0 nm) and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics