Low-pressure metalorganic vapor phase epitaxy of GaAs using monoethylarsine

Kachi, Tetsu
December 1994
Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3374
Academic Journal
Examines the growth of gallium arsenide by metalorganic vapor phase epitaxy using monoethylarsine precursors. Promotion of surface morphology by monoethylarsine; Quality of crystal films in trialkylarsine precursors; Suppression of parasitic gas phase side reactions between arsenic and gallium precursors.


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