TITLE

Low-pressure metalorganic vapor phase epitaxy of GaAs using monoethylarsine

AUTHOR(S)
Kachi, Tetsu
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3374
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of gallium arsenide by metalorganic vapor phase epitaxy using monoethylarsine precursors. Promotion of surface morphology by monoethylarsine; Quality of crystal films in trialkylarsine precursors; Suppression of parasitic gas phase side reactions between arsenic and gallium precursors.
ACCESSION #
4319506

 

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