TITLE

Hole effective mass in remote doped Si/Si[sub 1-x]Ge[sub x] quantum wells with 0.05...x...0.3

AUTHOR(S)
Whall, T.E.; Plews, A.D.; Mattey, N.L.; Parker, E.H.C.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3362
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines effective masses in doped silicon (Si)/silicon germanide (SiGe) hole quantum wells. Formation of the two-dimensional hole gas at SiGe/Si heterointerface; Dependence of hole effective mass on Ge concentration; Calculations of nonparabolicity in SiGe.
ACCESSION #
4319502

 

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