Hole effective mass in remote doped Si/Si[sub 1-x]Ge[sub x] quantum wells with 0.05...x...0.3

Whall, T.E.; Plews, A.D.; Mattey, N.L.; Parker, E.H.C.
December 1994
Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3362
Academic Journal
Examines effective masses in doped silicon (Si)/silicon germanide (SiGe) hole quantum wells. Formation of the two-dimensional hole gas at SiGe/Si heterointerface; Dependence of hole effective mass on Ge concentration; Calculations of nonparabolicity in SiGe.


Related Articles

  • Back gating of a two-dimensional hole gas in a SiGe quantum well. Emeleus, C.J.; Sadeghzadeh, M.A. // Applied Physics Letters;4/7/1997, Vol. 70 Issue 14, p1870 

    Details the back-gating of a two-dimensional hole gas in a silicon germanide (SiGe) quantum well. Variation in the density of the two-dimensional hole gas by the reverse and forward voltage biasing of the gate; Use of the technique to demonstrate the evolution with decreasing carrier density of...

  • Intersubband absorption in Si1-xGex/Si multiple quantum wells. Karunasiri, R. P. G.; Park, J. S.; Mii, Y. J.; Wang, K. L. // Applied Physics Letters;12/10/1990, Vol. 57 Issue 24, p2585 

    The intersubband infrared absorption of holes in Si1-xGex/Si multiple quantum wells is observed. The quantum well structure consists of 10 periods of 40-Ã…-thick Si0.6Ge0.4 wells and 300-Ã…-thick Si barriers. The samples are prepared using molecular beam epitaxy. In the experiment, the...

  • Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator. Rahman, F.; Gallagher, B. L.; Behet, M.; De Boeck, J. // Applied Physics Letters;7/6/1998, Vol. 73 Issue 1 

    We report on a technique we have recently developed to fabricate very high quality gates and gated structures on InAs/Al[sub x]Ga[sub 1-x]Sb quantum wells. The low thermal budget process leads to highly stable gates with extremely low leakage currents. Both electron and hole concentrations can...

  • Optical transitions between light hole subbands in InGaAs/InP strained layer multiquantum wells. Ilouz, I.; Oiknine-Schlesinger, J. // Applied Physics Letters;4/24/1995, Vol. 66 Issue 17, p2268 

    Observes the light hole intersubbands transitions in both p-doped and photoexcited undoped strained indium gallium arsenide/indium phosphide multi-quantum well structures. Polarization of the absorption along the growth direction; Identification of impurity bound and free holes transitions;...

  • Subband dispersion of holes in AlAs/In[sub 0.10]Ga[sub 0.90]As/AlAs strained-layer quantum wells.... Lin, S.Y.; Zaslavsky, A. // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p601 

    Determines the subband dispersion of holes in double-barrier aluminum arsenide/indium[sub 0.10]gallium[sub 0.90]arsenide/aluminum arsenide strained-layer quantum wells. Analysis of the resonant magnetotunneling of holes; Observation of mass reversal, nonparabolicity and anticrossing; Lack of...

  • Overheating effect and hole-phonon interaction in SiGe heterostructures. Berkutov, I. B.; Andrievskii, V. V.; Komnik, Yu. F.; Myronov, M.; Mironov, O. A. // Low Temperature Physics;Nov2008, Vol. 34 Issue 11, p943 

    The effect of charge-carrier overheating in a two-dimensional (2D) hole gas is realized in a Si1-xGex quantum well, where x=0.13, 0.36, 0.8, or 0.95. The Shubnikov–de Haas (SdH) oscillation amplitude is used as a “thermometer” to measure the temperature of overheated holes....

  • Intersubband Cyclotron Resonance of Holes in Strained Ge/GeSi(111) Heterostructures with Germanium Wide Quantum Wells and Cyclotron Resonance of 1L Electrons in GeSi Layers. Aleshkin, V. Ya.; Veksler, D.B.; Gavrilenko, V.I.; Erofeeva, I.V.; Ikonnikov, A.V.; Kozlov, D.V.; Kuznetsov, O.A. // Physics of the Solid State;Jan2004, Vol. 46 Issue 1, p130 

    The submillimeter (hω = 0.5–5 meV) magnetoabsorption spectra of strained Ge/Ge[sub 1 – x]Si[sub x](111) multilayer heterostructures with thick Ge layers (d[sub Ge] = 300–850 Å, d[sub GeSi] ≈ 200 Å, x ≈ 0.1) are investigated at T = 4.2 K upon band-gap...

  • Spatial Variation of Hole Eigen Energies in Ge/Si Quantum Wells. Kaniewska, M.; Engström, O.; Karmous, A.; Kirfel, O.; Kasper, E.; Raeissi, B.; Piscator, J.; Zaremba, G.; Kaczmarczyk, M.; Wzorek, M.; Czerwinski, A.; Surma, B.; Wnuk, A. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p293 

    Ge quantum well (QW) structures were prepared through Si-capping of 3.3 ML of Ge by MBE on p+-(001) Si substrates at a growth temperature of 550 °C. The spatial variation of hole eigen energies in the QW were revealed by DLTS. Depending on the position on the wafer surface, the hole emission...

  • Negative absolute mobility of holes in n-doped GaAs quantum wells. Höpfel, R. A.; Shah, J.; Wolff, P. A.; Gossard, A. C. // Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p572 

    We observe the effect of negative absolute mobility for minority holes in n-modulation-doped GaAs quantum wells at low temperatures. Photoinjected minority holes drift towards the positive electrode, which is shown experimentally using a photoluminescence imaging technique. The effect is...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics