TITLE

Enhancement of high-temperature photoluminescence in strained Si[sub 1-x]Ge[sub x]/Si

AUTHOR(S)
St. Amour, A.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3344
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measures the photoluminescence (PL) of strained silicon germanide (SiGe) alloy quantum wells (QW) on Si. Passivation of Si surface to increase SiGe QW PL; Control of surface recombination on SiGe PL decay; Achievement of SiGe PL from 77 to 250 Kelvin.
ACCESSION #
4319496

 

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