Enhancement of high-temperature photoluminescence in strained Si[sub 1-x]Ge[sub x]/Si

St. Amour, A.; Sturm, J.C.; Lacroix, Y.; Thewalt, M.L.W.
December 1994
Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3344
Academic Journal
Measures the photoluminescence (PL) of strained silicon germanide (SiGe) alloy quantum wells (QW) on Si. Passivation of Si surface to increase SiGe QW PL; Control of surface recombination on SiGe PL decay; Achievement of SiGe PL from 77 to 250 Kelvin.


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