TITLE

Molecular beam epitaxial growth of high quality InSb

AUTHOR(S)
Michel, E.; Singh, G.; Sivken, S.; Besikci, C.; Bove, P.; Ferguson, I.; Razeghi, M.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3338
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of indium antimonide (InSb) by molecular beam epitaxy. Optimization of InSb by reflection high energy electron diffraction; Use of InSb for large area detector arrays; Application of InSb in magnetoresistive sensors.
ACCESSION #
4319493

 

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