TITLE

High efficiency submicron light-emitting resonant tunneling diodes

AUTHOR(S)
Buhmann, H.; Mansouri, L.; Wang, J.; Beton, P.H.; Eaves, L.; Henini, M.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3332
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication of gallium arsenide/aluminum arsenide p-i-n submicron resonant tunneling diodes (RTLED). Differences of the electroluminescent spectra between tunneling diodes and large area diodes; Application of RTLED for submicron optoelectronic devices; Effects of surfaces on the optoelectronic performance of RTLED.
ACCESSION #
4319491

 

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