TITLE

Surface scattering of x rays from InP (001) wafers

AUTHOR(S)
Li, J.H.; Cui, S.F.; Li, M.; Li, C.R.; Mai, Z.H.; Wang, Y.T.; Zhuang, Y.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3317
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the surface morphology of sulfur- and iron-doped indium phosphide wafers. Influence of surface roughness on device quality; Introduction of height-height correlation length for rough surface; Sensitivity of scattering methods to the surface morphology.
ACCESSION #
4319486

 

Related Articles

  • Depth distribution of deep-level centers in silicon dioxide near an interface with indium phosphide. Berman, L. S. // Semiconductors;Jan1997, Vol. 31 Issue 1, p67 

    The constant capacitance method with measurement of the voltage�time dependence over a long period of time is used to determine the profile of the density of deep-level centers in an insulator at an interface with a semiconductor. The distribution of deep-level centers in silicon dioxide...

  • The Effect of Treatment in a Pulsed Magnetic Field on the Kinetics of Oxidation of Indium Phosphide Crystals. Levin, M. N.; Semenova, G. V.; Tatarintsev, A. V.; Shumskaya, O. N. // Technical Physics Letters;Sep2005, Vol. 31 Issue 9, p762 

    It is demonstrated that preliminary treatment of semiconductors (for example, indium phosphide) in a pulsed magnetic field can increase the rate of surface chemical reactions (in particular, oxidation). © 2005 Pleiades Publishing, Inc.

  • High external emission efficiency in intentionally ordered GaInP/GaAs structures. J. S. Song; S. H. Seo; Y. C. Choi; H. S. Song; Y. H. Chang; M. H. Oh; D. C. Oh; T. Yao; J. H. Chang; C. S. Han; K. W. Koo // Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG 

    The authors report on an additional effect of the intentionally ordered GaInP layers obtained by using the double tilt GaAs substrates, i.e., the misoriented (001) GaAs substrates toward the two directions of [110] and [-110]. In photoluminescence (PL) spectra at 7 K, it is found that the...

  • Doping profile of InP nanowires directly imaged by photoemission electron microscopy. Hjort, M.; Wallentin, J.; Timm, R.; Zakharov, A. A.; Andersen, J. N.; Samuelson, L.; Borgström, M. T.; Mikkelsen, A. // Applied Physics Letters;12/5/2011, Vol. 99 Issue 23, p233113 

    InP nanowires (NWs) with differently doped segments were studied with nanoscale resolution using synchrotron based photoemission electron microscopy. We clearly resolved axially stacked n-type and undoped segments of the NWs without the need of additional processing or contacting. The lengths...

  • First principles study on InP (001)-(2 × 4) surface oxidation. Santosh, K. C.; Wang, Weichao; Dong, Hong; Xiong, Ka; Longo, Roberto C.; Wallace, Robert M.; Cho, Kyeongjae // Journal of Applied Physics;Mar2013, Vol. 113 Issue 10, p103705 

    A theoretical study of the oxidation of InP(001)-(2 × 4) surface is performed using density functional theory methods. Our results on surface oxidation show that the oxygen adsorption does not produce any gap states in the bulk InP band gap, due to the saturation of surface In dangling...

  • Indium Phosphide ICs Complement CMOS. Raghavan, Gopal // Siliconindia;Jun2003, Vol. 7 Issue 5, p38 

    Discusses the use of indium phosphide in high-speed optoelectronic applications. Characteristics of indium phosphide; Difference from other semiconductors; Other applications of indium phosphide.

  • Metal reactivity effects on the surface recombination velocity at InP interfaces. Rosenwaks, Y.; Shapira, Yoram; Huppert, D. // Applied Physics Letters;12/10/1990, Vol. 57 Issue 24, p2552 

    Direct measurements of the surface recombination velocity (SRV) on etched InP(110) and at its interfaces with various metals deposited by thermal evaporation have been performed using ultrafast time-resolved photoluminescence. The results show that the original InP low SRV is retained when these...

  • Enhanced quantum efficiency internal photoemission detectors by grating coupling to surface plasma waves. Brueck, S. R. J.; Diadiuk, V.; Jones, T.; Lenth, W. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p915 

    Enhanced quantum efficiencies have been obtained for Au-InP internal photoemission detectors using grating coupling of incident radiation into surface plasma waves confined to the air-metal interface. Enhancements of over a factor of 30 are observed at the resonance coupling angles. A model...

  • Photoluminescence efficiency recovery due to enhanced annealing of radiation defect in p-type InP by photogenerated carrier recombination. Kamada, H.; Ando, K.; Yamaguchi, M. // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p913 

    Photoluminescence efficiency recovery in 1-MeV electron irradiated InP due to photon excitation is demonstrated. Photoluminescence intensity recovers with incident excitation power in an exponential-like manner and its recovery rate increases when temperature rises. These phenomena are explained...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics