Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200-30

Notzel, Richard; Temmyo, Jiro; Kamada, Hidehiko; Furuta, Tomofumi
July 1994
Applied Physics Letters;7/25/1994, Vol. 65 Issue 4, p457
Academic Journal
Examines the photoluminescence (PL) emission of strained indium gallium arsenide quantum disks self-organized on gallium arsenide (311)boron substrates. Use of metalorganic vapor phase epitaxy; Control of the disk sizes by the indium content of the material; Characterization of the PL spectra using excitation spectroscopy.


Related Articles

  • 2.51 eV photoluminescence from Zn-doped CuAlSe[sub 2] epilayers grown by low-pressure.... Chichibu, S.; Matsumoto, S.; Shirakata, S.; Isomura, S.; Higuchi, H. // Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3306 

    Examines the photoluminescence (PL) peak in zinc-doped copper aluminum selenide epilayers grown by low-pressure metalorganic chemical vapor deposition. Absence of PL peak in aluminum-rich layers; Use of secondary ion mass spectrometry in estimating zinc doping concentration; Effect of zinc...

  • Excitation intensity dependence of photoluminescence in Ga0.52In0.48P. DeLong, M. C.; Taylor, P. C.; Olson, J. M. // Applied Physics Letters;8/6/1990, Vol. 57 Issue 6, p620 

    The excitation intensity dependence of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates has been investigated as a function of epitaxial layer growth temperature and substrate orientation. It is well known that the degree of ordering...

  • Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase.... Fang, Z.M.; Ma, K.Y.; Cohen, R.M.; Stringfellow, G.B. // Applied Physics Letters;9/16/1991, Vol. 59 Issue 12, p1446 

    Examines the infrared photoluminescence (PL) from indium arsenide epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy. Dependence of PL on growth temperature; Decrease of integrated PL intensity; Identification of carbon as a dominant impurity.

  • Anomalous temperature dependence of the ordered Ga0.5In0.5P photoluminescence spectrum. Kondow, Masahiko; Minagawa, Shigekazu; Inoue, Youji; Nishino, Taneo; Hamakawa, Yoshihiro // Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1760 

    The temperature dependence of the photoluminescence spectrum of Ga0.5 In0.5 P/GaAs grown by organometallic vapor phase epitaxy is measured. Samples with a highly long-range ordered structure show anomalous behavior, where peak energy changes with temperature exhibiting Z-shape dependence. In the...

  • Deep-level photoluminescence studies on Si-doped, metalorganic chemical vapor deposition grown AlxGa1-xAs. Visser, E. P.; Tang, X.; Wieleman, R. W.; Giling, L. J. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3266 

    Presents a study that performed a deep-level photoluminescence (PL) on silicon-doped, metal organic chemical vapor deposition grown Al[subx]Ga[sub1-x]As as a function of the growth parameters. Novel PL emissions for Al[subx]Ga[sub1-x]As that was recorded; Factors to which the systematic...

  • Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si. Liang, Jiachang; Jiang, Junhua; Zhao, Jialong; Gao, Ying // Journal of Applied Physics;5/1/1996, Vol. 79 Issue 9, p7173 

    Presents information on a study that examined the photoluminescence emissions at various temperatures in GaAs epilayers grown on silicon with [arsenic]/[gallium]=20-50 by metalorganic chemical vapor deposition. Methodology of the study; Results and discussion on the study.

  • Broad photoluminescence band in undoped Al[sub x]Ga[sub 1-x]As grown by organometallic vapor phase epitaxy. Kakinuma, H.; Akiyama, M. // Journal of Applied Physics;6/1/1997, Vol. 81 Issue 11, p7533 

    We have studied the 77 K photoluminescence (PL) of undoped-Al[sub x]Ga[sub 1-x]As (0.21≤x≤0.83) grown by organometallic vapor phase epitaxy. A deep broad (DB) PL band is found at 1.6–1.7 eV at a range of x from 0.21 to 0.63, with a maximum intensity at around x = 0.5. Its...

  • Very high purity InP epilayer grown by metalorganic chemical vapor deposition. Razeghi, M.; Maurel, Ph.; Defour, M.; Omnes, F.; Neu, G.; Kozacki, A. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p117 

    Very high purity InP epilayers have been grown by low-pressure metalorganic chemical vapor deposition growth technique using trimethylindium as In source. Residual doping levels as low as 3×1013 cm-3 , with Hall mobility as high as 6000 cm2 V-1 s-1 at 300 K and 200 000 cm2 V-1 s-1 at 50 K...

  • Resonant photoluminescence excitation in GaAs grown directly on Si. Zemon, S.; Jagannath, C.; Shastry, S. K.; Miniscalco, W. J.; Lambert, G. // Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p213 

    We describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light-hole photoluminescence (PL) region, one identified with a free-exciton process and the other with...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics