Photoluminescence of a staggered In[sub 0.5]Ga[sub 0.5]P/Al[sub x]Ga[sub 1-x]As heterojunction

Kwan-Shik Kim; Jong Boong Lee
July 1994
Applied Physics Letters;7/25/1994, Vol. 65 Issue 4, p451
Academic Journal
Presents the photoluminescence of a staggered In[sub 0.5]Ga[sub 0.5]P/Al[sub x]Ga[sub 1-x]As heterojunction. Relevance of below-band-gap photoluminescence; Significance of the decrease in laser excitation intensity; Presentation of the expected band alignment of the heterojunction at various aluminum moles.


Related Articles

  • Determination of Al mole fraction for null conduction band offset in In[sub 0.5]Ga[sub 0.5]P/Al.... Kwan-Shik Kim; Yong-Hoon Cho // Applied Physics Letters;9/18/1995, Vol. 67 Issue 12, p1718 

    Investigates the photoluminescence properties of the indium-gallium- phosphorus/aluminum-gallium-arsenic. Composition of aluminum for null conduction band offset of the heterojunction; Transitivity between the conduction band offset values; Fraction of band gap energy difference associated with...

  • Characterization of processing-induced defects in high-purity InP by photoluminescence. Mayer, K. M.; Makita, Y.; Yamada, A.; Shibata, H.; Beye, A. C.; Shimada, J. // Journal of Applied Physics;8/1/1992, Vol. 72 Issue 3, p1080 

    Presents a study that investigated low-temperature photoluminiscence experiments performed on high-purity indium-phosphorus (InP) substrates. Characterization of ultrapure InP substrates; Information on photoluminescence spectra; Comparison of different annealing methods.

  • InGaAsP (1.3 μm) grown by liquid-phase epitaxy in the V groove of a channeled InP substrate: A photoluminescence study. Swaminathan, V.; Koos, G. L.; Wilt, D. P. // Journal of Applied Physics;7/1/1986, Vol. 60 Issue 1, p372 

    Presents a study that compared the photoluminescence characteristics of an undoped n-type indium (In)-gallium-arsenic-phosphorus (P) grown lattice matched by liquid-phase epitaxy in the V grooves of a channeled InP substrate with that grown over a planar substrate. Exhibition of well-defined...

  • Magnetophotoluminescence of neutral acceptor states in InSb. Stotz, J. A. H.; Thewalt, M. L. W. // Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2332 

    Magnetophotoluminescence experiments on n-type bulk indium antimonide crystals have been performed using a cryogenically cooled interferometer. Both donor-acceptor-pair and free electron-to-neutral acceptor recombination transitions have been observed for four distinct acceptor species. Despite...

  • Creation and suppression of point defects through a kick-out substitution process of Fe in InP. Zhao, Y. W.; Dong, H. W.; Chen, Y. H.; Zhang, Y. H.; Jiao, J. H.; Zhao, J. Q.; Lin, L. Y.; Fung, S. // Applied Physics Letters;4/22/2002, Vol. 80 Issue 16, p2878 

    Indium antisite defect In[sub P]-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation...

  • Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001). Brault, J.; Gendry, M.; Grenet, G.; Hollinger, G.; Olivares, J.; Salem, B.; Benyattou, T.; Bremond, G. // Journal of Applied Physics;7/1/2002, Vol. 92 Issue 1, p506 

    InAs nanostructures were grown on In[sub 0.52]Al[sub 0.48]As alloy lattice matched on InP(001) substrates by molecular beam epitaxy using specific growth parameters in order to improve island self-organization. We show how the change in InAs surface reconstruction via growth temperature from (2...

  • Characterization of deep-level defects in In1-xGaxAs/InP. Bacher, F. R. // Journal of Applied Physics;7/15/1988, Vol. 64 Issue 2, p708 

    Presents information on a study which characterized the deep-level defects in InGaAs epitaxial layer using photoluminescence spectra. Reasons the InGaAs is important technologically; Analysis of the defect in InGaAs; Experimental methods; Results and discussion.

  • Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm. Bloch, J.; Shah, J.; Pfeiffer, L. N.; Pfeiffer, L.N.; West, K. W.; West, K.W.; Chu, S. N. G.; Chu, S.N.G. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    We report the growth and characterization of multiple layers of self-organized InAs quantum dots emitting near 1.3 μm. We analyze their optical properties as a function of the number of dot layers and investigate how the vertical stack modifies the dot size distribution. © 2000 American...

  • Variation of the critical layer thickness with In content in strained InxGa1-xAs-GaAs quantum wells grown by molecular beam epitaxy. Andersson, T. G.; Chen, Z. G.; Kulakovskii, V. D.; Uddin, A.; Vallin, J. T. // Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p752 

    The critical width Lc for misfit dislocation generation has been determined for molecular beam epitaxy grown strained InxGa1-xAs (0.1


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics