TITLE

Surface roughness during chemical beam etching and its remedy by enhanced cation diffusion

AUTHOR(S)
Chiu, T.H.; Williams, M.D.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/25/1994, Vol. 65 Issue 4, p448
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the surface roughness during chemical etching and the remedy through electrodiffusion of cations. Tolerance of instant switching between the etch and the growth modes; Identification of a roughening mechanism; Achievement of mirror-like morphology.
ACCESSION #
4319458

 

Related Articles

  • Etching roughness for (100) silicon surfaces in aqueous KOH. Palik, E. D.; Glembocki, O. J.; Heard, I.; Burno, P. S.; Tenerz, L. // Journal of Applied Physics;9/15/1991, Vol. 70 Issue 6, p3291 

    Presents a study that examined the quality of vertical roughness produced by the etching of silicon in aqueous KOH by varying several experimental parameters. Principle origin of vertical roughness; Preparation of sample used in the experiment; Dependence of roughness on the time of etching.

  • Three-dimensional electron probe roughness analysis of InP sidewalls processed by reactive ion.... Matsutani, Akihiro; Koyama, Fumio // Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p64 

    Presents a quantitative three dimensional measurement of sidewall roughness of InP etched by chlorine based reactive ion beam etching (RIBE). Effectiveness of RIBE; Discussion on sidewall roughness; Use of field emission electron probe surface roughness analyzer.

  • Impact of Silicon Surface Roughness upon MOS after TMAH and KOH Silicon Etching. Rashid, M.; Ibrahim, K.; Aziz, A. Abdul; Ooi, P. K. // AIP Conference Proceedings;7/7/2010, Vol. 1250 Issue 1, p85 

    Wet Si etching was explored via different concentrations of tetramethylammonium hydroxide (TMAH) and potassium hydroxide (KOH). It was verified that lower concentrations give rise to higher etching rates thus higher surface roughness for both TMAH and KOH. Impact on MOS capacitor includes C-V...

  • Dry etching characteristics of amorphous As2S3 film in CHF3 plasma. Choi, Duk-Yong; Madden, Steve; Rode, Andrei; Wang, Rongping; Luther-Davies, Barry // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113305 

    The authors describe the dry etching characteristics of amorphous As2S3 films in CHF3 plasma and the development of an optimized fabrication process for compact waveguides. The observed etching behavior is due to the relative densities of fluorine atoms, polymer precursors, and ions in the...

  • Fabrication of one-dimensional photonic crystals by photoelectrochemical etching of silicon. Zharova, Yu. A.; Fedulova, G. V.; Gushchina, E. V.; Ankudinov, A. V.; Astrova, E. V.; Ermakov, V. A.; Perova, T. S. // Semiconductors;Jul2010, Vol. 44 Issue 7, p954 

    The conditions of formation of deep periodic trenches by photoelectrochemical etching of n-Si (100) with linear seeds on the surface are analyzed. Criteria for the proper choice of the period of seed grooves and the etching current density in relation to the doping level of the substrate are...

  • A Highly Efficient Process Applying Sige Film to Generate Quasi-Beehive Si Nanostructure for the Growth of Platinum Nanopillars with High Emission Property for the Applications of X-Ray Tube. Pin-Hsu Kao; Wen-Shou Tseng; Hung-Ming Tai; Yuan-Ming Chang; Jenh-Yih Juang // World Academy of Science, Engineering & Technology;2012, Issue 71, p682 

    We report a lithography-free approach to fabricate the biomimetics, quasi-beehive Si nanostructures (QBSNs), on Si-substrates. The self-assembled SiGe nanoislands via the strain induced surface roughening (Asaro-Tiller-Grinfeld instability) during in-situ annealing play a key role as patterned...

  • Comparison of different means for tooth surface polishing after bracelet debonding. Chen Li; Zhao Bing-jiao; Zhang Ju-ju // Shanghai Journal of Stomatology;Apr2008, Vol. 17 Issue 2, p208 

    PURPOSE: To observe the tooth surface after acid etching and removing of bonding adhesive by two means for polishing. METHODS: Thirty extracted premolars for orthodontic purpose were used in this experiment. The brackets were adhered and debonded. Then the premolars were randomly divided into...

  • Chemical Etching of CdTe in Aqueous Solutions of H2O2-HI-Citric Acid. Ivanits'ka, V. G.; Moravec, P.; Franc, J.; Tomashik, Z. F.; Feychuk, P. I.; Tomashik, V. M.; Shcherbak, L. P.; Mašek, K.; Höschl, P. // Journal of Electronic Materials;Aug2007, Vol. 36 Issue 8, p1021 

    An iodine-based etching system, H2O2-HI-citric acid, has been developed and tested on CdTe samples with orientations (111)A, (111)B, (110), and (100). The etching velocity of CdTe was shown to depend on sample orientation and other etching conditions. The surface roughness was comparable with...

  • Effects of reactive ion etching on chemical vapor deposition. Wong, C. Y.; Batson, P. E. // Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p253 

    Silicon surfaces were exposed to reactive ion etching with CCl2F2, followed by low pressure chemical vapor deposition of silicon nitride. Examination with transmission electron microscopy shows a 5-nm homogeneous layer with interfacial roughness about the order of the layer thickness between the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics