TITLE

Diffusion-limited interaction of dislocation loops and interstitials during dry oxidation in

AUTHOR(S)
Heemyong Park; Robinson, Heyward; Jones, Kevin S.; Law, Mark E.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/25/1994, Vol. 65 Issue 4, p436
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the interaction of implantation-induced dislocation loops in crystals and interstitials in silicon. Experiments under dry oxidation conditions; Consideration of the interaction as a diffusion limited process; Agreement of simulations with secondary ion mass spectroscopy.
ACCESSION #
4319454

 

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