TITLE

Growth rate enhancement using ozone during rapid thermal oxidation of silicon

AUTHOR(S)
Kazor, A.; Gwilliam, R.; Boyd, Ian W.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/25/1994, Vol. 65 Issue 4, p412
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the rapid thermal oxidation of silicon in an ozone enriched oxygen ambient. Comparison of growth rates achieved between conventional oxidation and the use of ozone; Similarity in the absorption spectrum of films; Significance of the technique to reduce thermal budget.
ACCESSION #
4319445

 

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