TITLE

Performance improvement of amorphous silicon thin-film transistors with SiO[sub 2] gate

AUTHOR(S)
Jeong Hyun Kim; Eui Yeal Oh; Byung Chul Ahn; Donggil Kim; Jin Jang
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p775
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Evaluates the performance of hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT). Use of chemical vapor deposition silica as a gate insulator; Decrease of threshold voltage and subthresholed swing; Reduction of interface state density.
ACCESSION #
4319420

 

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