Solid-state reaction-mediated low-temperature bonding of GaAs and InP wafers to Si substrates

Ma, Z.; Zhou, G.L.; Morkoc, H.; Allen, L.H.; Hsieh, K.C.
February 1994
Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p772
Academic Journal
Examines the integration of GaAs- and InP-based optoelectronic devices with silicon (Si) microelectronic devices. Use of wafer bonding method as a bonding material; Occurrence of solid-state reactions at GaAs/Ag-Ge interfaces; Regrowth of GeSi alloys on Si substrate.


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