InP on Si(111): Accommodation of lattice mismatch and structural properties

Krost, A.; Heinrichsdorff, F.; Bimberg, D.; Cerva, H.
February 1994
Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p769
Academic Journal
Examines the growth of indium phosphide (InP) on vicinal silicon (Si) by chemical vapor deposition. Use of heterostructures for electronic devices; Comparison of defect sensitivity between InP and GaAs; Use of Si as a substrate for InP-based structures.


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