TITLE

InP on Si(111): Accommodation of lattice mismatch and structural properties

AUTHOR(S)
Krost, A.; Heinrichsdorff, F.; Bimberg, D.; Cerva, H.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p769
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of indium phosphide (InP) on vicinal silicon (Si) by chemical vapor deposition. Use of heterostructures for electronic devices; Comparison of defect sensitivity between InP and GaAs; Use of Si as a substrate for InP-based structures.
ACCESSION #
4319418

 

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