InAlAs/InGaAs metal-semiconductor-metal photodiodes heteroepitaxially grown on Si substrates

Sasaki, T.; Enoki, T.; Tachikawa, M.; Sugo, M.; Mori, H.
February 1994
Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p751
Academic Journal
Examines the fabrication of InAlAs/InGaAs metal-semiconductor-metal photodiodes (PD) on heteroepitaxial InP layers. Growth of III-V compound semiconductors on silicon (Si) substrates; Pulse response of PD on Si; Responsivity of PD at bias voltage.


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