TITLE

InAlAs/InGaAs metal-semiconductor-metal photodiodes heteroepitaxially grown on Si substrates

AUTHOR(S)
Sasaki, T.; Enoki, T.; Tachikawa, M.; Sugo, M.; Mori, H.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p751
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication of InAlAs/InGaAs metal-semiconductor-metal photodiodes (PD) on heteroepitaxial InP layers. Growth of III-V compound semiconductors on silicon (Si) substrates; Pulse response of PD on Si; Responsivity of PD at bias voltage.
ACCESSION #
4319410

 

Related Articles

  • Metalliclike mictomagnetic state in La0.55R0.15Ca0.3MnO3 (R=Y and Ho). Xu, Jun; Liang, J.K.; Tang, W.H.; Chen, X.L.; Liu, Q.L. // Journal of Applied Physics;7/1/1998, Vol. 84 Issue 1, p651 

    Provides information on a study investigating the magnetic and electronic transport properties of the title compounds. Methodology used to conduct the study; Information on the magnetic behaviors for Y0.15 and Ho0.15; Findings of the study.

  • Initial stages of epitaxial growth: Gallium arsenide on silicon. Zinke-Allmang, M.; Feldman, L. C.; Nakahara, S. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p144 

    A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion...

  • Current ratio controller CRC2 for electrodeposition. Fiedler, D.A.; Scheer, U.; Fritz, H.P. // Review of Scientific Instruments;Sep95, Vol. 66 Issue 9, p4744 

    Shows the design of an automatic current control unit to keep the relative anodic currents constant. Simultaneous use of four injection anodes of different and differently changing resistances for the quasicontinuous potentiostatic electrodeposition of compound semiconductors; Oscillation-free...

  • Enthalpy of formation of antisite defects and antistructure pairs in III-V compound semiconductors. Dobson, T. W.; Wager, J. F. // Journal of Applied Physics;9/1/1989, Vol. 66 Issue 5, p1997 

    Analyzes the enthalpy of formation of antisite defects and antistructure pairs in III-V compound semiconductors. Review of related literature; Application of a formulation for estimating the enthalpy of the semiconductors; Discussion on the disorder and electronic contributions of enthalpy.

  • High purity synthesis of YBa[sub 2]Cu[sub 4]O[sub 8] at low oxygen pressure. Bonoldi, L.; Sparpaglione, M. // Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p964 

    Investigates the high purity synthesis of YBa[sub 2]Cu[sub 4]O[sub 8] (124) compound at low oxygen pressure. Methods used in the resistivity measurements; Nature of the material produced; Characterization of the procedures by a low-temperature reaction.

  • Thermal wet oxidation of GaP and Al[sub 0.4]Ga[sub 0.6]P. Epple, J. H.; Epple, J.H.; Chang, K. L.; Chang, K.L.; Pickrell, G. W.; Pickrell, G.W.; Cheng, K. Y.; Cheng, K.Y.; Hsieh, K. C.; Hsieh, K.C. // Applied Physics Letters;8/21/2000, Vol. 77 Issue 8 

    Thermal wet oxidations of GaP and Al[sub 0.4]Ga[sub 0.6]P at 650 °C for various times have been performed. Comparisons are made on oxidation rates and post oxidation morphology. Transmission electron microscopy shows that when oxidizing GaP, polycrystalline monoclinic GaPO[sub 4]·2H[sub...

  • Growth dynamics of GaAs on a vicinal surface of GaAs(100) in migration-stimulated epitaxy: computer simulation. Tsyrlin, G. �. // Technical Physics Letters;Feb97, Vol. 23 Issue 2, p154 

    A computer simulation is made of growth of III-V binary compound semiconductors from fluxes of dimer anions and atomic cations to study the time dependences of the average height and roughness of GaAs films for various conditions of growth by migration-stimulated epitaxy on a vicinal surface of...

  • Effect of mismatch strain on band gap in III-V semiconductors. Kuo, C. P.; Vong, S. K.; Cohen, R. M.; Stringfellow, G. B. // Journal of Applied Physics;6/15/1985, Vol. 57 Issue 12, p5428 

    Reports on the effect of mismatch strain on energy band in III-IV alloy semiconductors. Benefits of III-IV compound semiconductors; Epilayers used in the study.

  • Surface kinetic processes and the morphology of equilibrium GaAs(100) surfaces: A Monte Carlo study. Ogale, S. B.; Thomsen, M.; Madhukar, A. // Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p723 

    The morphological behavior of model static surfaces of compound semiconductors, as well as dynamic growth fronts relaxing towards their equilibrium behavior upon termination of growth, is studied via Monte Carlo simulations based upon the configuration-dependent reactive incorporation model. It...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics